12014-94-7 Usage
Description
Cerium selenide (CeSe2) is a semiconductor material composed of cerium and selenium. It is known for its unique electrical and optical properties, such as high electron mobility and a narrow bandgap, which make it a promising candidate for various electronic and optoelectronic applications.
Uses
Used in Semiconductor Industry:
Cerium selenide is used as a semiconductor material for its potential applications in electronic and optoelectronic devices. Its unique properties, such as high electron mobility and a narrow bandgap, make it suitable for use in the development of advanced semiconductors.
Used in Photodetectors:
Cerium selenide is used in the development of photodetectors due to its optical properties. Its narrow bandgap allows for efficient absorption of light, making it a promising material for use in photodetectors that can detect a wide range of wavelengths.
Used in Electronic and Optical Devices:
Cerium selenide is used in the development of various electronic and optical devices, such as solar cells, light-emitting diodes (LEDs), and other optoelectronic devices. Its unique properties make it a valuable material for improving the performance and efficiency of these devices.
Cerium selenide can be synthesized using various methods, such as chemical vapor deposition and sputtering, and its properties can be further tailored through doping and alloying. Ongoing research continues to explore its potential for use in semiconductors, photodetectors, and other electronic and optical devices.
Check Digit Verification of cas no
The CAS Registry Mumber 12014-94-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,1 and 4 respectively; the second part has 2 digits, 9 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 12014-94:
(7*1)+(6*2)+(5*0)+(4*1)+(3*4)+(2*9)+(1*4)=57
57 % 10 = 7
So 12014-94-7 is a valid CAS Registry Number.
InChI:InChI=1/2Ce.3Se
12014-94-7Relevant articles and documents
Electronic structure of CeSe probed by resonant photoemission spectroscopy: A test case for the single-impurity Anderson Hamiltonian
Chiaia,Duo,Tjernberg,Goethelid,Bjoerkqvist,Kumigashira,Yang,Takahashi,Suzuki,Lindau
, p. 12030 - 12035 (1998)
One of the most interesting problems, in the study of the electronic structure of Ce compounds, is the evaluation of the intrinsic linewidth of the atomiclike Ce 4f states in low Kondo temperature compositions. In this context, the case of CeSe is of particular interest, because of the energy location of the Ce 4f0 peak in a pseudogap formed mainly between the Se 4p and the Ce 5d density of states (DOS). This fact results experimentally in the most narrow Ce 4f0 final state so far reported (～280 meV), and represents at the same time an experimental upper limit for the lifetime broadening of this state in low Kondo temperature compounds, and extra information useful in the refinement of theoretical fitting of the data. We present single impurity Anderson Hamiltonian calculations which take advantage of the Ce 5d calculated local density approximation DOS to simulate the delocalized valence band continuum that mixes with the 4f impurity state. These calculations fit the experimental data and reproduce a certain degree of mixing between the Ce 4f and Se 4p states reasonably well.
