13572-98-0

Basic information

• Product Name: GADOLINIUM IODIDE
• Synonyms: Gadolinium iodide (GdI3);Gadolinium(III)iodid;gadoliniumiodide(gdi3);GdI3;GADOLINIUM(III) IODIDE;GADOLINIUM IODIDE;gadolinium triiodide;GADOLINIUM(III) IODIDE, ANHYDROUS, POWDE R, 99.99%
• CAS NO: 13572-98-0
• Molecular Formula: GdI₃
• Molecular Weight: 537.96
• EINECS: 236-997-6
• Product Categories: Catalysis and Inorganic Chemistry;Chemical Synthesis;Crystal Grade Inorganics;Gadolinium Salts;GadoliniumMetal and Ceramic Science;Salts
• Mol File: 13572-98-0.mol
• Article Data: 14

Chemical Properties

• Melting Point: 926°C
• Boiling Point: 1340℃ [CRC10]
• Appearance: /Powder
• Water Solubility: Soluble in water.
• Sensitive: Hygroscopic
• CAS DataBase Reference: GADOLINIUM IODIDE(CAS DataBase Reference)
• NIST Chemistry Reference: GADOLINIUM IODIDE(13572-98-0)
• EPA Substance Registry System: GADOLINIUM IODIDE(13572-98-0)

Safety Data

• Hazard Codes: T
• Statements: 61-42/43
• Safety Statements: 53-36/37/39-45
• WGK Germany: 3
• TSCA: Yes
• Hazardous Substances Data: 13572-98-0(Hazardous Substances Data)

Usage

Description

Gadolinium Iodide is a chemical compound consisting of gadolinium, a rare earth element, and iodine. It is characterized by its yellow color and high purity level of 99.9%. Gadolinium Iodide is available in a -20 mesh form and is commonly used in various applications due to its unique properties.

Uses

Used in Semiconductor Industry:
Gadolinium Iodide is used as a compound in the semiconductor industry for its high purity and unique properties. It plays a crucial role in the manufacturing and functioning of semiconductor devices, contributing to their overall performance and efficiency.
Used in High Purity Applications:
Due to its high purity level, Gadolinium Iodide is also utilized in other high purity applications where the presence of impurities can significantly affect the outcome. Its use in these applications ensures the desired level of purity and quality is maintained.
Used in Medical Imaging:
Gadolinium Iodide is used as a contrast agent in medical imaging, particularly in Magnetic Resonance Imaging (MRI). It enhances the visibility of internal structures, allowing for more accurate diagnosis and treatment planning. The compound's properties make it an effective and safe option for improving image quality in various medical imaging procedures.

InChI:InChI=1/Gd.3HI/h;3*1H/q+3;;;/p-3

Upstream product

• 10034-85-2 hydrogen iodide 
• 7553-56-2 iodine 
• 7790-49-0 thorium(IV) iodide 
• 13470-22-9 uranium tetraiodide 
• 624-73-7 1,2-Diiodoethane 

Downstream Products

• 163087-03-4 [Gd(C₁₇H₁₆N₄O₃)2I₂]⁽¹⁺⁾*I^(1-) = [Gd(C₁₇H₁₆N₄O₃)2I₂]I 
• 242489-96-9 Gd(C₆H₅N₂C₃(CH₃)2(CHO)O)4I₂⁽¹⁺⁾*I^(1-)=[Gd(C₆H₅N₂C₃(CH₃)2(CHO)O)4I₂]I 
• 1227796-63-5 [Gd(η5-C5Me4CH2C12H7NPh)2I(THF] 

Relevant articles and documents

Giant Negative Magnetoresistance in GdI2: Prediction and Realization

The electronic structure of the layered d1 compound GdI2 has been examined systematically in view of its relation to other layered d1 systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface. The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5) K and displays large negative magnetoresistance ≈70% at 7 T close to room temperature. This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculations.

Gd10I16(C2)2 and Gd10Br15B2/Tb10Br15B 2 cluster compounds with M10 twin octahedra

The compound Gd10I16(C2)2 can be prepared from Gd metal, GdI3 and C at 950 °C. It crystallizes in P1? with a = 10.463(4) A?, b = 16.945(6) A?, c = 11.220(4) A?, α = 99.15(3)°, β = 92.68(3)° und γ = 88.06(3)°. Gd10Br15B2 is formed between 900 und 950 °C, Tb10Br15B2 between 900 und 930 °C from stoichiometric amounts of the rare earth metals, tribromide and boron. Both compounds crystallize in the space group P1? for Gd10Br15B2 with a = 8.984(2) A?, b = 9.816(2) A?, c = 10.552(5) A?, α = 91.14(3)°, β = 114.61(3)° and γ = 110.94(3)° and for Tb10Br15B2 with a = 8.939(4) A?, b = 9.788(3) A?, c = 10.502(2) A?, α = 91.19(3)°, β = 114.51(3)° and γ = 111.10(2)°. In the crystal structures of all three compounds the rare earth metals form edge-shared Ln10 twin octahedra. In Gd10I16(C2)2 the Gd octahedra are centered with C2 groups (dC-C = 1.43(7) A?). In Ln10Br15B2 (Ln = Gd, Tb) the octahedra contain single boron atoms. The clusters are connected through halide atoms to chains [Ln10(Z)2Xi4Xi-i 4/2Xi-a2]. Adjacent chains are fused threedimensionally via Ii-a2Ii-a6 for the Gd iodide carbide and via Bri-i2/2Bri-a6 for the bromide borides of Gd und Tb. It is interesting to see an identical pattern of connection between the chains for the reduced oxomolybdates, e. g. PbMo5O8.

From an impurity to the pure compound - An electron microscopy study

The power of electron microscopy techniques for the determination of structure and composition of marginal byproducts is demonstrated for rare earth metal cluster compounds. Small amounts of the new phase Gd4GaI 6 in samples with the nominal composition Gd7GaI 12 could only be identified by a combined approach of EDX, electron diffraction and HRTEM. The structure of Gd4GaI6 can be assigned to the Y4BBr6-type containing chains of Gd 6 octahedra which are centered by Ga atoms. The results of the electron microscopy study initiated the synthesis of homogeneous samples of the new compound Gd4GaI6 by applying the correct ratio of the starting materials.

RE19(C2)3i34 (RE = Y, Gd): Compounds with discrete RE6I12 clusters and isolated RE atoms

The compounds RE19(C2)3I34 (RE = Y, Gd) were prepared from RE, REI3 and carbon in a molar ratio of 20:34:18 by the addition of three parts of REH at 920 °C (Y) and 900 °C (Gd), respectively, forming moisture sensitive, black shiny brittle polyhedra. X-ray single crystal investigations indicated the triclinic system and E value statistics showed P1, a = 9.3683(9) , b = 10.3410(9) A, c = 22.1726(20) A, α = 79.104( 10)°, β = 88.175( 11 )°, γ = 69.227( 10)° for Y19(C2)3I 34 and a = 9.4172(9) A, b = 10.3390(10) A c= 22.3711(24) A, α= 79.001(12)°, β= 88.320(12)°, γ = 69.250(11)° for Gd19(C2)3I34,, respectively. The RE atoms form two sets of different RE6 octahedra centered by C2 groups, which are coordinated by iodine atoms above all edges. In addition one isolated RE position occurs. The refinement served problems because of significant disorder showing up in a 65 % occupation of the isolated RE position and quite significant residual electron densities near the heavy atom positions. Electron diffraction confirmed the ideal structure, however, a detailed analysis via HRTEM showed alternations in the sequence of two kinds of layers.

New layered germanide halides RE2GeX2 (RE = Y, Gd; X = Br, I)

The title compounds were synthesized from RE, REX3, and Ge under an Ar atmosphere at 1200-1370 K. Y2GeI2 and Gd 2GeI2 crystallize in space group R3m with lattice constants a = 4.2135(3) and 4.2527(1) A and c = 31.480(2) and 31.657(1) A, respectively. Gd2GeBr2 crystallizes in two modifications, the 1T-type (space group P3m1; a = 4.1668(2) A, c = 9.8173(6) A) and the 3R-type (space group R3m; a = 4.1442(9) A, c = 29.487(7) A). The structural motifs of RE2GeX2 compounds are Ge-centered slightly distorted RE6 octahedra connected via their common edges and extending in the a and b directions. The resulting close-packed double layers are separated by halogen atoms. The electrical resistivity measurements revealed semiconductor behavior for Y 2GeI2 and Gd2GeI2 and a metal-semiconductor transition for 1T-Gd2GeBr2. Magnetic susceptibility and heat capacity measurements show long-range magnetic ordering for Gd2GeI2 and 1T-Gd2GeBr2 at ～15 and ～13 K, respectively.