13777-23-6 Usage
Description
Hafnium Iodide is a chemical compound consisting of hafnium and iodine elements. It exists in two forms: a yellowish-orange cubic crystal with a lattice constant 'a' of 1.176 nm, or as a red powder. HAFNIUM IODIDE is sensitive to moisture, which means it can react or degrade when exposed to water or humid environments.
Uses
Used in Chemical Industry:
Hafnium Iodide is used as a precursor material for the production of various hafnium-containing compounds. Its unique properties make it suitable for creating compounds with specific characteristics, which can be utilized in different applications within the chemical industry.
Used in Electronics Industry:
Due to its sensitivity to moisture, Hafnium Iodide can be employed in the electronics industry as a material for creating moisture-sensitive components or sensors. Its reaction to moisture can be harnessed to develop innovative electronic devices or systems that require moisture detection or control.
Used in Research and Development:
Hafnium Iodide's unique properties and reactivity make it an interesting subject for research and development in various scientific fields. It can be used to study the effects of moisture on chemical compounds, explore new methods of compound synthesis, or investigate its potential applications in advanced materials and technologies.
Used in Nuclear Industry:
Hafnium, as an element, is known for its use in the nuclear industry, particularly as a component in control rods for nuclear reactors. Hafnium Iodide, being a hafnium-containing compound, could potentially be used in the development of new materials or technologies related to the nuclear industry, such as advanced control rod designs or radiation shielding materials.
Please note that the provided materials do not explicitly mention the uses of Hafnium Iodide. The uses listed above are inferred based on the general properties and characteristics of the compound, as well as its potential applications in various industries.
Check Digit Verification of cas no
The CAS Registry Mumber 13777-23-6 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,7,7 and 7 respectively; the second part has 2 digits, 2 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 13777-23:
(7*1)+(6*3)+(5*7)+(4*7)+(3*7)+(2*2)+(1*3)=116
116 % 10 = 6
So 13777-23-6 is a valid CAS Registry Number.
InChI:InChI=1/Hf.4HI/h;4*1H/q+4;;;;/p-4
13777-23-6Relevant articles and documents
C–F Bond Cleavage Reactions with Beryllium, Magnesium, Gallium, Hafnium, and Thorium Halides
Dankert, Fabian,Deubner, H. Lars,Müller, Matthias,Buchner, Magnus R.,Kraus, Florian,von H?nisch, Carsten
, p. 1501 - 1507 (2020/02/20)
The work describes unexpected stoichiometric C–F bond cleavage reactions of beryllium, magnesium, gallium, hafnium and thorium halides with α,α,α-trifluorotoluene. The reaction of BeBr2 / GaBr3 or MgBr2 / GaBr3 mixtures as well as neat GaI3 with α,α,α-trifluorotoluene in the presence of (OSi2Me4)2 (I) yields the carbenium ion containing compounds [Ph-C(O2Si2Me4)][GaX4] (X = Br: 1, X = I/F: 2). Both compounds were successfully characterized and a defluorination type reaction under incorporation of a siloxy unit was observed. Compound 1 was also characterized by single-crystal X-ray diffraction analysis. The conversion of α,α,α-trifluorotoluene with BeI2, HfI4 or ThI4 turned out to be a halodefluorination-type reaction with formation of α,α,α-triiodotoluene (3). An adequate NMR spectroscopic and the X-ray crystallographic characterization of 3 were performed for the first time.
Arene Derivatives of Zirconium(II) and Hafnium(II)
Calderazzo, Fausto,Pallavicini, Piersandro,Pampaloni, Guido
, p. 1813 - 1818 (2007/10/02)
The anhydrous tetrahalides MX4 (M = Zr or Hf, X = Br or I) were prepared by treating M(BH4)4 with dry HX in n-heptane as solvent, followed by sublimation under reduced pressure.The reaction of ZrCl4 with Al-AlCl3-aromatic hydrocarbon systems led to soluti
