1430213-55-0Relevant articles and documents
Enhanced performance of benzothieno[3,2-b]thiophene (BTT)-based bottom-contact thin-film transistors
Huang, Peng-Yi,Chen, Liang-Hsiang,Chen, Yu-Yuan,Chang, Wen-Jung,Wang, Juin-Jie,Lii, Kwang-Hwa,Yan, Jing-Yi,Ho, Jia-Chong,Lee, Cheng-Chung,Kim, Choongik,Chen, Ming-Chou
, p. 3721 - 3728 (2013)
Three new benzothieno[3,2-b]thiophene (BTT; 1) derivatives, which were end-functionalized with phenyl (BTT-P; 2), benzothiophenyl (BTT-BT; 3), and benzothieno[3,2-b]thiophenyl groups (BBTT; 4; dimer of 1), were synthesized and characterized in organic thin-film transistors (OTFTs). A new and improved synthetic method for BTTs was developed, which enabled the efficient realization of new BTT-based semiconductors. The crystal structure of BBTT was determined by single-crystal X-ray diffraction. Within this family, BBTT, which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p-channel characteristic, with a carrier mobility as high as 0.22 cm2 V-1 s-1 and a current on/off ratio of 1×10 7, as well as good ambient stability for bottom-contact/bottom-gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds. Copyright