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283-55-6

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283-55-6 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 283-55-6 includes 6 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 3 digits, 2,8 and 3 respectively; the second part has 2 digits, 5 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 283-55:
(5*2)+(4*8)+(3*3)+(2*5)+(1*5)=66
66 % 10 = 6
So 283-55-6 is a valid CAS Registry Number.

283-55-6SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 19, 2017

Revision Date: Aug 19, 2017

1.Identification

1.1 GHS Product identifier

Product name 4,6,11-trioxa-1-aza-5-bismabicyclo[3.3.3]undecane

1.2 Other means of identification

Product number -
Other names 5-AZA-2,8,9-TRIOXA-1-BISMABICYCLO(3.3.3)UNDECANE

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:283-55-6 SDS

283-55-6Downstream Products

283-55-6Relevant articles and documents

Low temperature and controlled synthesis of Bi2(S1-xSex)3 thin films using a simple chemical route: Effect of bath composition

Salunkhe, Manauti M.,Khot, Kishorkumar V.,Sahare, Sanjay H.,Bhosale, Popatrao N.,Bhave, Tejashree

, p. 57090 - 57100 (2015/07/20)

Nanostructured bismuth sulphoselenide (Bi2(S1-xSex)3) thin films have been synthesized using a simple, cost-effective chemical bath deposition (CBD) method at room temperature (300 K). Structural, compositional, morphological and optical characterization and photoelectrochemical performance testing of these Bi2(S1-xSex)3 thin films has been carried out. The X-ray diffraction (XRD) study demonstrates that these thin films are nanocrystalline in nature with pure orthorhombic crystal structures. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDS) show that the deposited thin films are nearly stoichiometric in nature. Field emission scanning electron microscopy (FESEM) reveals different morphologies for the Bi2(S1-xSex)3 thin films. The linear nature of the plots seen in the UV-Vis-NIR absorption study confirms the direct allowed type of transition. J-V measurements with a solar simulator were carried out for all samples and the highest photoconversion efficiency, 0.3845%, has been recorded for the Bi2Se3 thin film. The significant boost in photoelectrochemical (PEC) performance might be due to the larger surface area with lower dislocation density and microstrain with a lower level of grain boundary resistance of Bi2Se3 thin films.

Bismuth ladder polymers: Structural and thermal studies of [Bi(OCH2CH2)3N]n and [(BixTb1-x(O2C2H2) 3N·2H2O]n

Bachman, Robert E.,Whitmire, Kenton H.,Thurston, John H.,Gulea, Aurelian,Stavila, Olexa,Stavila, Vitalie

, p. 249 - 255 (2008/10/08)

[Bi(OCH2CH2)3N],(Bi(TEA)), may be prepared by reaction of in situ generated Bi(OH)3 with triethanolamine in refluxing methanol. The complex crystallizes from solution as a double ladder polymer via the formation of additional metal-oxygen dative bonds to yield hypercoordinate and hypervalent metal centers. The structure of Bi(TEA) is very similar to that of Bi(O2CCH3)3N. The heterobimetallic nitriloacetate complex containing Bi and Tb was prepared by reaction of (NH4)3[Bi(Nta)2] with terbium nitrate in aqueous solution. Heating samples of [Bi(OCH2CH2)3N]n to 1000°C results in the formation of Bi2O3. It was shown that thermolysis of the [(BixTb1-x(O2C2H2) 3N)·H2O]n occurs in two stages, viz. the deaquation and pyrolysis of the ligand.

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