5495-80-7Relevant articles and documents
Positive resist composition, resist pattern forming process, and photomask blank
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Page/Page column 57; 59, (2019/10/01)
A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.
NOVEL SULPHONIUM COMPOUND AND METHOD FOR PRODUCING THE SAME, RESIST COMPOSITION, AND PATTERN FORMING METHOD
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Paragraph 0167; 0168, (2017/12/01)
PROBLEM TO BE SOLVED: To provide a resist composition that gives a resist film excellent in resolution, LWR, MEF and CDU, in far-ultraviolet lithography and EUV lithography, and provide a sulphonium compound for use therein, and provide a pattern forming method using the resist composition. SOLUTION: The present invention provides a sulphonium compound represented by the following formula (1) (where R1, R2 and R3 independently represent a C1-20 linear, branched or cyclic monovalent hydrocarbon group, which may contain a hetero atom. p and q independently represent an integer of 0-5. r is an integer of 0-4). SELECTED DRAWING: None COPYRIGHT: (C)2018,JPOandINPIT