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66773-34-0

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66773-34-0 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 66773-34-0 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 6,6,7,7 and 3 respectively; the second part has 2 digits, 3 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 66773-34:
(7*6)+(6*6)+(5*7)+(4*7)+(3*3)+(2*3)+(1*4)=160
160 % 10 = 0
So 66773-34-0 is a valid CAS Registry Number.

66773-34-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name (4-nitrophenyl) N-(2-phenylethyl)carbamate

1.2 Other means of identification

Product number -
Other names p-nitrophenyl N-phenethylcarbamate

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:66773-34-0 SDS

66773-34-0Relevant articles and documents

Biased agonist and medical application thereof

-

Paragraph 0278-0282, (2021/01/24)

The invention relates to compounds shown in structural formulas I and II, stereoisomers or pharmaceutically acceptable salts thereof, and a pharmaceutical composition containing the compounds, the stereoisomers or the pharmaceutically acceptable salts thereof as active ingredients, and uses of the compound, the stereoisomer thereof or the pharmaceutically acceptable salt thereof in preparation ofanalgesic drugs.

Semiconductor device

-

, (2007/10/16)

Provided is a DAD that improves resistance to latch-up and stabilizes breakdown voltage characteristic. Specifically, a first gate electrode (10) and a second drain electrode (13) are linear electrodes having a length not exceeding the length of a source electrode (9). An isolation region (20) is disposed on both end portions of these electrodes. The region surrounded by two isolation regions (20) and the source electrode (9) becomes a P channel MOS region (PR) where a P channel MOS transistor is to be formed. The isolation region (20) has a multi-trench structure that a plurality of trenches (21) are provided in a P type impurity region disposed so as to be rectangle as viewed in plan configuration. Each trench (21) is filled with a conductor such as polysilicon, and the filled conductor is disposed so that it makes no electrical contact with any specific part.

Multilevel selectivity in the mild and high-yielding chlorosilane- induced cleavage of carbamates to isocyanates

Chong, Pek Y.,Janicki, Slawomir Z.,Petillo, Peter A.

, p. 8515 - 8521 (2007/10/03)

The silane-induced cleavage of a series of N-p-tolylcarbamates and N- phenethylcarbamates to isocyanates has been investigated as a function of chlorosilane, carbamate substituent, and reaction conditions. Reaction yields were determined from the isolated ureas, which were formed by trapping the corresponding isocyanates with isobutylamine. Under room-temperature conditions, multilevel selectivity in carbamate activation has been demonstrated. This selectivity together with the generality of the methodology enhances the utility of carbamates as synthetic intermediates and protecting groups. To demonstrate the effectiveness of this selectivity, a series of biscarbamates were selectively monoactivated to isocyanates in excellent yields.

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