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6821-94-9

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6821-94-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 6821-94-9 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 6,8,2 and 1 respectively; the second part has 2 digits, 9 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 6821-94:
(6*6)+(5*8)+(4*2)+(3*1)+(2*9)+(1*4)=109
109 % 10 = 9
So 6821-94-9 is a valid CAS Registry Number.
InChI:InChI=1/2C9H19NS2.2C4H9.Sn/c2*1-3-5-7-10(9(11)12)8-6-4-2;2*1-3-4-2;/h2*3-8H2,1-2H3,(H,11,12);2*1,3-4H2,2H3;/q;;;;+2/p-2/r2C9H19NS2.C8H18Sn/c2*1-3-5-7-10(9(11)12)8-6-4-2;1-3-5-7-9-8-6-4-2/h2*3-8H2,1-2H3,(H,11,12);3-8H2,1-2H3/q;;+2/p-2

6821-94-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name [dibutyl(dibutylcarbamothioylsulfanyl)stannyl] N,N-dibutylcarbamodithioate

1.2 Other means of identification

Product number -
Other names EINECS 229-897-9

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:6821-94-9 SDS

6821-94-9Downstream Products

6821-94-9Relevant articles and documents

Organotin dithiocarbamates: Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)

Ramasamy, Karthik,Kuznetsov, Vladimir L.,Gopal, Kandasamy,Malik, Mohammad A.,Raftery, James,Edwards, Peter P.,O'Brien, Paul

, p. 266 - 276 (2013/04/10)

A series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements. Published 2013 by the American Chemical Society.

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