77-32-7 Usage
Description
5,5-diethyl-2-thiobarbituric acid is a chemical compound with the molecular formula C9H12N2O2S. It is a derivative of barbituric acid and contains a thiobarbituric acid group, which gives it unique chemical properties.
Used in Organic Synthesis:
5,5-diethyl-2-thiobarbituric acid is used as a building block for the synthesis of various other compounds.
Used in Pharmaceutical Research:
5,5-diethyl-2-thiobarbituric acid is used as a starting material for the development of new drugs.
Used in Neurological Disorders Treatment:
5,5-diethyl-2-thiobarbituric acid is used as a potential pharmacological agent for the treatment of neurological disorders due to its sedative and hypnotic effects.
Used in Antimicrobial Agents Development:
5,5-diethyl-2-thiobarbituric acid is used as a potential antimicrobial agent due to its antibacterial and antifungal properties.
Check Digit Verification of cas no
The CAS Registry Mumber 77-32-7 includes 5 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 2 digits, 7 and 7 respectively; the second part has 2 digits, 3 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 77-32:
(4*7)+(3*7)+(2*3)+(1*2)=57
57 % 10 = 7
So 77-32-7 is a valid CAS Registry Number.
InChI:InChI=1/C8H12N2O2S/c1-3-8(4-2)5(11)9-7(13)10-6(8)12/h3-4H2,1-2H3,(H2,9,10,11,12,13)
77-32-7Relevant articles and documents
Novel thiobarbituric acid derivatives, polymer including repeating unit derived therefrom, bottom anti-reflection coating composition containing the same and process for forming resist pattern using the composition
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Paragraph 0114-0117, (2017/08/23)
The present invention relates to novel thiobarbituric acid derivatives, a polymer comprising a repeating unit derived from the same, a bottom anti-reflective coating (BARC) composition containing the same, and a process for forming resist patterns using the same. Specifically, the present invention relates to a BARC composition comprising thiobarbituric acid derivatives or a polymer comprising a repeating unit derived from the same, which prevents the reflection at an underlying layer in a lithographic process, and has fast dry etching rate, and thus is useful for semiconductor ultrafine patterning; and to a process for forming resist patterns using the same.COPYRIGHT KIPO 2017