7783-26-8 Usage
Description
Trisilane, also known as silane trimer, is a silicon hydride with the chemical formula Si3H8. It is a colorless, flammable, and toxic gas that is a member of the silane family. Trisilane is formed by the trimerization of silane (SiH4), a process that involves the combination of three silane molecules to form a single trisilane molecule. Due to its high reactivity and potential applications, trisilane has attracted significant interest in various industries.
Uses
Used in Electronics Industry:
Trisilane is used as a precursor in the chemical vapor deposition (CVD) process for the production of silicon-based thin films and coatings. It is particularly useful for depositing silicon layers on semiconductor wafers, which are essential components in the manufacturing of integrated circuits and microelectronic devices.
Used in Solar Energy Industry:
Trisilane is employed as a source material for the production of silicon-based solar cells. The high purity and reactivity of trisilane make it an attractive option for depositing silicon layers on solar cell substrates, improving the efficiency and performance of solar energy systems.
Used in Chemical Industry:
Trisilane is used as a reagent in the synthesis of various organosilicon compounds, such as silane coupling agents, silicone polymers, and silane-based crosslinkers. These compounds have a wide range of applications in the chemical industry, including adhesives, sealants, coatings, and elastomers.
Used in Glass and Ceramics Industry:
Trisilane is utilized as a reducing agent in the production of specialty glass and ceramics. Its ability to reduce metal oxides at lower temperatures makes it a valuable component in the manufacturing process, resulting in improved properties and performance of the final products.
Properties
Colorless liquid; density 0.743 g/mL at 0°C; freezes at –117.4°C; boils at 52.9°C; vapor density 4.15 g/L at atmospheric pressure; decomposes in water; decomposes in carbon tetrachloride.
Hazard
Explodes on contact with air, reacts violently
with carbon tetrachloride and chloroform.
Check Digit Verification of cas no
The CAS Registry Mumber 7783-26-8 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,7,8 and 3 respectively; the second part has 2 digits, 2 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 7783-26:
(6*7)+(5*7)+(4*8)+(3*3)+(2*2)+(1*6)=128
128 % 10 = 8
So 7783-26-8 is a valid CAS Registry Number.
InChI:InChI=1/H8Si3/c1-3-2/h3H2,1-2H3
7783-26-8Relevant articles and documents
Unusually selective synthesis of chlorohydrooligosilanes
Lainer, Thomas,Fischer, Roland,Leypold, Mario,Holthausen, Michael,Wunnicke, Odo,Haas, Michael,Stueger, Harald
supporting information, p. 13812 - 13815 (2020/11/18)
New pathways towards molecular chlorohydrooligosilanes enable their one-pot synthesis in preparative amounts either by the selective chlorination of the corresponding perhydrosilanes with HCl/AlCl3 or by the partial hydrogenation of perchlorooligosilanes
Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K
Sogoshi, Norihito,Sato, Shoji,Takashima, Hideaki,Sato, Tetsuya,Hiraoka, Kenzo
, p. 986 - 987 (2012/09/22)
Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou
Diagnostics of the gas-phase thermal decomposition of Si2H6 using vacuum ultraviolet photoionization
Tonokura, Kenichi,Murasaki, Tetsuya,Koshi, Mitsuo
, p. 507 - 511 (2008/10/08)
Vacuum ultraviolet (VUV) photoionization at 10.2 eV was employed for the detection of gas-phase molecules formed after thermal decomposition of disilane at a total pressure of 30 Torr and in the temperature range of 298-740 K. The SinH2(n+1) (n=3-5) and SinH2n (n=2-5) species resulting from disilane pyrolysis in a flow reactor were directly observed using time-of-flight mass spectrometry. Unlike multiphoton ionization at 6.4 eV photons, no fragmentation was observed by the VUV single-photon ionization at 10.2 eV.
