106418-67-1Relevant articles and documents
Synthesis of new iridium complexes and their electrophosphorescent properties in polymer light-emitting diodes
Zhu, Weiguo,Liu, Chuanzhen,Su, Lijun,Yang, Wei,Yuan, Ming,Cao, Yong
, p. 50 - 55 (2003)
Several new iridium complexes with p-substituted 2-phenylpyridine (R-PPy) ligands have been synthesized and characterized. The complexes were incorporated into phosphorescent polymer light-emitting devices using soluble poly[1,4-bis(6′-cyano-6′-methylhept
Suzuki-miyaura cross-coupling reactions of unactivated alkyl halides catalyzed by a nickel pincer complex
Di Franco, Thomas,Boutin, Nicolas,Hu, Xile
, p. 2949 - 2958 (2013/11/06)
A nickel(II) pincer complex, [(MeN2N)Ni-Cl], was used to catalyze alkyl-alkyl and alkyl-aryl Suzuki-Miyaura coupling reactions of unactivated alkyl halides. The coupling of 9-alkyl-9-borabicyclo[3.3.1]nonane and 9-phenyl-9-borabicyclo[3.3.1]nonane reagents with alkyl halides was achieved in modest to good yields. The reactions tolerated a variety of useful functional groups including ester, ether, furan, thioether, acetal, and Boc groups. Georg Thieme Verlag Stuttgart, New York.
Solution processable symmetric 4-alkylethynylbenzene end-capped anthracene derivatives
Jang, Sang Hun,Kim, Hyunjin,Hwang, Min Ji,Jeong, Eun Bin,Yun, Hui Jun,Lee, Dong Hoon,Kim, Yun-Hi,Park, Chan Eon,Yoon, Yong-Jin,Kwon, Soon-Ki,Lee, Sang-Gyeong
, p. 541 - 548 (2012/05/05)
New candidates composed of anthracene and 4-alkylethynylbenzene end-capped oligomers for OTFTs were synthesized under Sonogashira coupling reaction conditions. All oligomers were characterized by FT-IR, mass, UV-visible, and PL emission spectrum analyses, cyclic voltammetry (CV), differential scanning calorimetry (DSC), thermal gravimetric analysis (TGA), 1H-NMR, and 13C-NMR. Investigation of their physical properties showed that the oligomers had high oxidation potential and thermal stability. Thin films of DHPEAnt and DDPEAnt were characterized by spin coating them onto Si/SiO 2 to fabricate top-contact OTFTs. The devices prepared using DHPEAnt and DDPEAnt showed hole field-effect mobilities of 4.0 × 10-3 cm2/Vs and 2.0 × 10-3 cm2/Vs, respectively, for solution-processed OTFTs.