12005-95-7

Basic information

• Product Name: MANGANESE ARSENIDE
• Synonyms: MANGANESE(II) ARSENIDE;MANGANESE ARSENIDE;Manganese(III) arsenide;MANGANESE(III) ARSENIDE, LUMPS 99%;Manganese(II) arsenide, lumps, 99%;manganese(iii) arsenide, lumps;Arsinidynemanganese(III);Manganese arsenic
• CAS NO: 12005-95-7
• Molecular Formula: AsMn
• Molecular Weight: 129.86
• EINECS: 234-478-9
• Mol File: 12005-95-7.mol
• Article Data: 0

Chemical Properties

• Appearance: /
• Density: 6,2 g/cm3
• CAS DataBase Reference: MANGANESE ARSENIDE(CAS DataBase Reference)
• NIST Chemistry Reference: MANGANESE ARSENIDE(12005-95-7)
• EPA Substance Registry System: MANGANESE ARSENIDE(12005-95-7)

Safety Data

• Statements: 11-23/25-50/53
• Safety Statements: 16-20/21-28-45
• RIDADR: 3179
• Hazardous Substances Data: 12005-95-7(Hazardous Substances Data)

Usage

General Description

Manganese arsenide, also known as manganese(III) arsenide, is a chemical compound with the formula MnAs. It is a crystalline solid that is a member of the III-V semiconductor family and has potential applications in electronic and magnetic devices. Manganese arsenide is a semiconducting material with a narrow bandgap, making it suitable for use in photovoltaic and thermoelectric devices. It also exhibits interesting magnetic properties, potentially making it useful in spintronics and other magnetic technologies. However,

InChI:InChI=1/As.Mn/rAsMn/c1-2

Related news

Metalorganic chemical vapour deposition of MANGANESE ARSENIDE (cas 12005-95-7) for thin film magnetic applications07/20/2019

Thin films of the ferromagnetic material manganese arsenide (MnAs) have been grown for the first time by atmospheric pressure metalorganic chemical vapour deposition (MOCVD), using tricarbonylmethylcyclopentadienyl manganese (TCM) and arsine. A detailed study of the MnAs growth characteristics a...detailed