12018-09-6

Basic information

• Product Name: CHROMIUM SILICIDE
• Synonyms: Chromium silicide sputtering target, 76.2mm (3.0in) dia x 6.35mm (0.250in) thick, 99.5% (metals basi;Einecs 234-633-0;Chromium Silicide, -325 Mesh;Chromium silicide sputtering target, 76.2mm (3.0 in.) dia. x 6.35mm (0.250 in.) thick;Chromium silicide sputtering target, 50.8mm (2.0 in.) dia. x 6.35mm (0.250 in.) thick;Chromium silicide sputtering target, 50.8mm (2.0 in.) dia. x 3.18mm (0.125 in.) thick;CHROMIUM SILICIDE;CHROMIUM DISILICIDE
• CAS NO: 12018-09-6
• Molecular Formula: CrSi2
• Molecular Weight: 108.17
• EINECS: 234-633-0
• Mol File: 12018-09-6.mol
• Article Data: 0

Chemical Properties

• Melting Point: 1490°C
• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: Gray/Powder
• Density: 4,7 g/cm3
• Water Solubility: Insoluble in water.
• Sensitive: Moisture Sensitive
• CAS DataBase Reference: CHROMIUM SILICIDE(CAS DataBase Reference)
• NIST Chemistry Reference: CHROMIUM SILICIDE(12018-09-6)
• EPA Substance Registry System: CHROMIUM SILICIDE(12018-09-6)

Safety Data

• Hazard Codes: Xn
• Statements: 20/21/22-42/43
• Safety Statements: 7-36
• WGK Germany: 3
• TSCA: Yes
• Hazardous Substances Data: 12018-09-6(Hazardous Substances Data)

Usage

Chemical Properties

gray powder(s); used as 99.99% and 99.5% pure sputtering targets to fabricate wear-resistant interconnections and gate electrodes in IC devices [STR93] [CER91]

Uses

Chromium silicide is applied in production of ceramic materials. It can also produce an oxidation-resistant surface in a low pressure plasma spraying.

InChI:InChI=1/Cr.2HSi/h;2*1H/rCrH2Si2/c2-1-3/h2-3H

Related news

Elaboration of thin CHROMIUM SILICIDE (cas 12018-09-6) layers on P+ implanted silicon08/03/2019

The aim of the present work is to investigate the mechanism of growth of chromium silicides versus several parameters. The samples are constituted of a thin chromium layer (≈80 nm) which is deposited under vacuum by electron beam evaporation/condensation onto P+ implanted Si(1 0 0) and Si(1 1 1...detailed

Characterization of CHROMIUM SILICIDE (cas 12018-09-6) thin layer formed on amorphous silicon films08/01/2019

A detailed investigation of the compositional, optical and electrical properties of a chromium silicide layer grown at room temperature on top of doped amorphous silicon films is presented. The formation of the layer is promoted only when phosphorous atoms are present in the film. The deposition...detailed

CHROMIUM SILICIDE (cas 12018-09-6) film on ceramic substrate for pressure measurement07/31/2019

In this paper we present a device, based on amorphous silicon technology, fabricated on ceramic substrate able to perform pressure measurement with both good linearity and sensitivity. The active material of the sensor is a thin film (below 5 nm) of chromium silicide formed at room temperature o...detailed

Synthesis and oxidation behavior of CHROMIUM SILICIDE (cas 12018-09-6) (Cr3Si) nanorods07/30/2019

Chromium silicide (Cr3Si) nanorods were successfully synthesized using anhydrous chromium trichloride and silicon tetrachloride as starting materials via a co-reduction route at 600 °C in an autoclave. X-ray powder diffraction pattern indicated that the product was cubic Cr3Si (a=4.555 Å). Tran...detailed