12033-62-4 Usage
Description
Tantalum Nitride is a chemical compound with the formula Ta3N5, known for its unique properties that make it suitable for various applications in the electronics and semiconductor industries. It is characterized by its hexagonal, brown, bronze, or black crystals and is insoluble in water, with slight solubility in aqua regia, nitric acid, and hydrogen fluoride.
Uses
Used in Electronics and Semiconductor Industry:
Tantalum Nitride is used as a barrier or "glue" layer for the following applications:
1. To create a barrier layer between copper or other conductive metals and dielectric insulator films, such as thermal oxides, during the manufacture of integrated circuits. This helps prevent the diffusion of copper into the insulating layer, which can cause short circuits and reduce the performance of the device.
2. To create thin film surface mount resistors, which are essential components in electronic devices and circuits. Tantalum Nitride's properties make it an ideal material for these resistors, ensuring reliable and consistent performance.
Production Methods
Tantalum nitride, TaN, is produced by direct synthesis of the elements at 1,100 °C (2,012 °F). Very pure TaN has been produced by spontaneous reaction of lithium amide, LiNH2, and TaCl5 . The compound is often added to cermets in 3–18 wt %. Ta3N5 is used as a red pigment in plastics and paints.
Check Digit Verification of cas no
The CAS Registry Mumber 12033-62-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,3 and 3 respectively; the second part has 2 digits, 6 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 12033-62:
(7*1)+(6*2)+(5*0)+(4*3)+(3*3)+(2*6)+(1*2)=54
54 % 10 = 4
So 12033-62-4 is a valid CAS Registry Number.
InChI:InChI=1/5N.3Ta/q5*-3;3*+5
12033-62-4Relevant articles and documents
Tantalum organic precursors and their use for vapor phase deposition of tantalum containing films
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Paragraph 0048, (2015/09/23)
Compounds of formula (I): M(R1CS2)R2R3NR6 R1, R2, R3 are organic ligands being independently selected in H, C1-C4 alkyl group linear or branched, aryl group, silyl group, alkylamine group, alkylsylilamine group. R6 is an organic ligand being independently selected in H, C1-C4 alkyl group linear or branched, aryl group, silyl group, alkylsylilamine group. M is tantalum.