12038-63-0

Basic information

• Product Name: RHENIUM(IV) SULFIDE
• Synonyms: RHENIUM(IV) SULFIDE;RHENIUM SULFIDE;RHENIUM (VI) SULFIDE;RHENIUM DISULFIDE;rhenium disulphide;Rhenium(IV)disulfide;Einecs 234-878-3;Rhenium sulfide (res2)
• CAS NO: 12038-63-0
• Molecular Formula: ReS2
• Molecular Weight: 250.34
• EINECS: 234-878-3
• Mol File: 12038-63-0.mol
• Article Data: 17

Chemical Properties

• Boiling Point: °Cat760mmHg
• Flash Point: °C
• Appearance: /Powder
• Density: 7.506
• Water Solubility: Insoluble in water. Soluble in 1N sodium hydroxide solution.
• CAS DataBase Reference: RHENIUM(IV) SULFIDE(CAS DataBase Reference)
• NIST Chemistry Reference: RHENIUM(IV) SULFIDE(12038-63-0)
• EPA Substance Registry System: RHENIUM(IV) SULFIDE(12038-63-0)

Safety Data

• TSCA: Yes
• Hazardous Substances Data: 12038-63-0(Hazardous Substances Data)

Usage

Description

RHENIUM(IV) SULFIDE is a chemical compound consisting of rhenium and sulfur elements, characterized by its triclinic crystal structure and commonly found in a nonstoichiometric form. It is a diamagnetic semiconductor with thickness-dependent physical and chemical properties, making it a versatile material for various applications.

Uses

Used in Semiconductor Applications:
RHENIUM(IV) SULFIDE is used as a diamagnetic semiconductor for its unique electronic properties, which can be manipulated for different applications in the semiconductor industry.
Used in Photocatalysis:
RHENIUM(IV) SULFIDE is used as a photocatalyst for its ability to facilitate chemical reactions under light exposure, making it suitable for environmental and energy-related applications.
Used in Photovoltaics:
RHENIUM(IV) SULFIDE is used as a material in photovoltaic cells, taking advantage of its light-absorbing properties to convert sunlight into electrical energy.
Used in Gas Sensing:
RHENIUM(IV) SULFIDE is used as a gas sensor due to its sensitivity to various gases, making it a valuable component in detecting and monitoring gas concentrations.
Used in Lithium-ion Batteries:
RHENIUM(IV) SULFIDE is used as a component in lithium-ion batteries, contributing to their energy storage capacity and performance.
Used in Field Effect Transistors:
RHENIUM(IV) SULFIDE is used as a material in field effect transistors, leveraging its semiconducting properties for controlling electrical current flow in electronic devices.
Used in Spintronics:
RHENIUM(IV) SULFIDE is used in spintronics applications, where its electron spin properties are exploited for advanced electronic devices and quantum computing.
Used as a Catalyst:
RHENIUM(IV) SULFIDE is used as an effective catalyst for the hydrogenation of organic compounds, being resistant to poisoning by sulfur compounds and capable of catalyzing the reduction of NO to N2O at 100°C.
Production Methods:
RHENIUM(IV) SULFIDE can be prepared by heating Re2S7 with sulfur in a vacuum, resulting in a product with 99.9% purity and an -80mesh size.

InChI:InChI=1/Re.2S/rReS2/c2-1-3

Upstream product

• 1333-74-0 hydrogen 
• 7704-34-9 sulfur 
• 1313-82-2 sodium sulfide 
• 10466-65-6 potassium perrhenate 
• 13569-71-6 rhenium tetrachloride 
• 7783-06-4 hydrogen sulfide 
• 7446-08-4 selenium(IV) oxide 
• 207984-93-8 per-rhenic acid 
• 13596-35-5 rhenium(V) chloride 
• 62-55-5 thioacetamide 

Relevant articles and documents

The formation of ReS2 inorganic fullerene-like structures containing Re4 parallelogram units and metal-metal bonds

The encapsulation of ReOx within ReS2 inorganic fullerene-like cages is described for the first time. The encapsulate was prepared by the sulfidization of both hand-milled and ball-milled samples of ReO2; partial conversio

Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals

We report the synthesis of high-quality single crystals of ReS2 and ReSe2 transition metal dichalcogenides using a modified Bridgman method that avoids the use of a halogen transport agent. Comprehensive structural characterization using X-ray diffraction and electron microscopy confirm a distorted triclinic 1T′ structure for both crystals and reveal a lack of Bernal stacking in ReS2. Photoluminescence (PL) measurements on ReS2 show a layer-independent bandgap of 1.51 eV, with increased PL intensity from thicker flakes, confirming interlayer coupling to be negligible in this material. For ReSe2, the bandgap is weakly layer-dependent and decreases from 1.31 eV for thin layers to 1.29 eV in thick flakes. Both chalcogenides show feature-rich Raman spectra whose excitation energy dependence was studied. The lower background doping inherent to our crystal growth process results in high field-effect mobility values of 79 and 0.8 cm2/(V s) for ReS2 and ReSe2, respectively, as extracted from FET structures fabricated from exfoliated flakes. Our work shows ReX2 chalcogenides to be promising 2D materials candidates, especially for optoelectronic devices, without the requirement of having monolayer thin flakes to achieve a direct bandgap.

Construction of heterojunctions between ReS2and twin crystal ZnxCd1?xS for boosting solar hydrogen evolution

Facilitating charge separation as well as surface redox reactions is considered to be an efficient way to improve semiconductor-based photocatalytic hydrogen generation. In this study, we developed a highly active and reliable photocatalyst, ReS2/T-ZCS, by anchoring nanoflower-like ReS2particles on the surface of host chalcogenide nanotwins (Zn0.5Cd0.5S). By virtue of the in-built driving force from the homojunction with a type-II staggered band alignment in twin crystal Zn0.5Cd0.5S (T-ZCS) and heterojunctions between T-ZCS and ReS2on the surface of the photocatalyst, a substantially improved charge separation and transfer property were achieved. Hence, the twin crystal Zn0.5Cd0.5S decorated nanoflower-like ReS2exhibits a significantly improved photocatalytic H2evolution rate of 112.10 mmol g?1h?1and the corresponding apparent quantum efficiency reaches 32.65% at 420 nm, which is 31 times larger than that of pure phase Zn0.5Cd0.5S. Our work not only couples the merits of homojunctions and heterojunctions to promote solar energy conversion, but also expands applications of the transition metal dichalcogenide (TMD) family in electrocatalysis, photothermal-catalysis and energy storage.

Rhenium(IV) sulfide nanotubes

Rhenium(IV) sulfide, ReS2, has been prepared with nanotubular morphology by carbon nanotube templating. A multiwall carbon nanotube material was impregnated with solutions of NH4ReO4 or ReCl5, followed by drying and sulfidation with H2S at 1000 °C. The composite material synthesized was characterized by high-resolution transmission electron microscopy and X-ray powder diffraction. Like previously described MS2 nanotube compounds, ReS2 has a layered structure consisting of S-M-S layers. Re atoms in ordinary ReS2 are octahedrally coordinated with S, and tetranuclear metal clusters are present as a consequence of metal-metal bonds. Copyright

Absorption-edge anisotropy in ReS2 and ReSe2 layered semiconductors

Polarization-dependent absorption measurements of ReS2 and ReSe2 single crystals have been carried out in the temperature range between 25 and 500 K. A significant shift towards lower energies has been observed in the transmittance spectra of E∥b polarization with respect to those corresponding to E⊥ b polarization. Analysis reveals that the absorption edges of ReS2 and ReSe2 are indirect allowed transitions. The parameters that describe the temperature dependence of the absorption edges with different polarizations in the van der Waals plane are evaluated. The results indicate that the electron-phonon coupling constants for E∥b polarization are considerably larger than those of E⊥ b polarization.

Temperature dependence of energies and broadening parameters of the band-edge excitons of ReS2 and ReSe2

We have measured the temperature dependence of the spectral features in the vicinity of the direct gaps Egd of ReS2 and ReSe2 in the temperature range between 25 and 450 K using piezoreflectance (PzR). From a detailed line-shape fit to the PzR spectra we have been able to determine accurately the temperature dependence of the energies and broadening parameters of the band-edge excitons. The parameters that describe the temperature variation of the transition energies and broadening function have been evaluated.

Constructing a 2D/2D interfacial contact in ReS2/TiO2: Via Ti-S bond for efficient charge transfer in photocatalytic hydrogen production

Exploring and adjusting the transport path of photo-generated carriers is vital to promote the charge separation efficiency and charge transfer ability for the photocatalytic hydrogen performance of novel semiconductor composites. Herein, this work focuses on the construction of a homojunction and heterojunction in semiconductors by fabricating ReS2 nanosheets on a TiO2 homojunction via Ti-S bond. The optimized built-in electric field of the homojunction immensely inhibits the recombination of photo-generated electrons and holes. The 2D/2D intimate interfacial contact between ReS2 nanosheets and 2D TiO2 is achieved by Ti-S bond, which gains high hydrogen evolution efficiency due to the shorter migration carrier distance and more rapid charge transfer. Additionally, theoretical calculations demonstrate that the O vacancy possesses stronger chemical interaction with sulfides in order to form a Ti-S bond. Compared with pure TiO2 and physical mixtures of ReS2 and TiO2, the optimized ReS2/TiO2 sample possesses 20 times and 3.6 times higher photocatalytic hydrogen performance, respectively. This work obtains an efficient charge transfer pathway of photocatalysts by preventing the recombination of carriers, which provides some new designs for growing sulfides and investigating the interfacial contact of photocatalysts.

Photoluminescent Re6Q8I2(Q = S, Se) Semiconducting Cluster Compounds

We report three new rhenium chalcohalide cluster compounds, Re6S8I2, Re6S4Se4I2, and Re6Se8I2. The materials crystallize in the three-dimensional (3D) Re6S8Cl2 structure type with the space group P21/n. They can be synthesized with sufficiently large iodi