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12046-36-5

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12046-36-5 Usage

General Description

Holmium hexaboride is a chemical compound with the formula HoB6. It is a rare-earth boride with a high melting point and excellent thermal and electrical conductivity. Holmium hexaboride has potential applications in high-temperature and high-power electronic devices, as well as in thermionic energy conversion. It is also being studied for its magnetic and optical properties, which could make it useful in a variety of advanced technologies. Additionally, holmium hexaboride has potential uses as a catalyst and in nuclear energy research. Overall, this compound has garnered interest for its unique combination of properties and potential for a wide range of applications in various industries.

Check Digit Verification of cas no

The CAS Registry Mumber 12046-36-5 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,4 and 6 respectively; the second part has 2 digits, 3 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12046-36:
(7*1)+(6*2)+(5*0)+(4*4)+(3*6)+(2*3)+(1*6)=65
65 % 10 = 5
So 12046-36-5 is a valid CAS Registry Number.

12046-36-5Upstream product

12046-36-5Downstream Products

12046-36-5Relevant articles and documents

The ternary RE-Si-B systems (RE = Dy, Ho, Er and Y) at 1270 K: Solid state phase equilibria and magnetic properties of the solid solution REB2-xSix (RE = Dy and Ho)

Roger, Jérome,Babizhetskyy, Volodymyr,Guizouarn, Thierry,Hiebl, Kurt,Guérin, Roland,Halet, Jean-Fran?ois

, p. 72 - 84 (2008/10/09)

The solid state phase equilibria in the ternary RE-Si-B diagrams (RE = Dy, Ho, Er and Y) were determined at 1270 K using experimental techniques such as X-ray diffraction, scanning electron microscopy and electron probe microanalysis. In general, three ternary phases were obtained for each diagram: the line compound RE5Si2B8 with tetragonal symmetry, the boron-inserted Nowotny phase RE5Si3Bx of Mn5Si3-type and the solid solution REB2-xSix of AlB2-type. Prior to this work, the binary systems RE-Si and RE-B, which form the boundary of each diagram, were also re-investigated. In addition to the structures of RE5Si3 (Mn5Si3-type, RE = Dy, Ho and Y) and Dy3Si4 (Ho3Si4-type) which were previously reported or will be presented in a forthcoming paper, the X-ray single crystal structures of RE5Si4 (Sm5Ge4-type, RE = Dy and Ho), DySi (CrB-type) and HoSi in both polymorphic modifications, i.e. the FeB- (high temperature) and CrB- (low temperature) types, were determined and are described herein. Structural relationships between members of the same series on one side, and between both forms of HoSi on the other side, are also discussed in terms of coordination polyhedra and interatomic distances. Finally, magnetic measurements were performed on the alloys REB2-xSix, which in case of RE = Dy exhibit a marked increase of the magneto-crystalline anisotropy, whereas for RE = Ho a change from ferromagnetic to antiferromagnetic behaviour with increasing silicon content is encountered.

Single Crystal Growth and Properties of Incongruently Melting TbB6, DyB6, HoB6, and YB6

Takahashi,Kunii

, p. 198 - 200 (2008/10/08)

Details of the single crystal growth of incongruently melting TbB6, DyB6, HoB6, and YB6using a crucible-free vertical floating zone method are reported. Magnetic susceptibility is reported and discussed. It is suggested that antiferro-quadrupolar ordering occurs in DyB6between 30 and 25.6 K.

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