137648-47-6 Usage
Description
Silane, [(2-iodophenyl)ethynyl]trimethylis a chemical compound that consists of a silicon atom bonded to three methyl groups and one ethynyl group attached to a phenyl ring with an iodine atom. It is recognized for its high reactivity and ability to react with a broad spectrum of functional groups, making it a valuable tool in the synthesis of complex organic molecules and polymers. This versatile chemical building block is also utilized as a precursor in the preparation of various functionalized silanes, which find applications in materials science, pharmaceuticals, and other industries.
Uses
Used in Organic and Polymer Chemistry:
Silane, [(2-iodophenyl)ethynyl]trimethylis used as a reagent in organic and polymer chemistry for its high reactivity and ability to react with a wide range of functional groups. This makes it instrumental in the synthesis of complex organic molecules and polymers, contributing to the development of new materials and compounds.
Used in Materials Science:
In the field of materials science, Silane, [(2-iodophenyl)ethynyl]trimethylis used as a precursor in the preparation of functionalized silanes. These silanes are essential in creating advanced materials with specific properties tailored for various applications, such as coatings, adhesives, and sealants.
Used in Pharmaceutical Industry:
The pharmaceutical industry also benefits from Silane, [(2-iodophenyl)ethynyl]trimethylas a precursor for functionalized silanes. These silanes can be incorporated into drug molecules to enhance their properties, such as solubility, stability, and bioavailability, leading to improved therapeutic effects.
Overall, Silane, [(2-iodophenyl)ethynyl]trimethylis a crucial component in the development of innovative products and materials across multiple industries, thanks to its unique structure and reactivity.
Check Digit Verification of cas no
The CAS Registry Mumber 137648-47-6 includes 9 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 6 digits, 1,3,7,6,4 and 8 respectively; the second part has 2 digits, 4 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 137648-47:
(8*1)+(7*3)+(6*7)+(5*6)+(4*4)+(3*8)+(2*4)+(1*7)=156
156 % 10 = 6
So 137648-47-6 is a valid CAS Registry Number.
137648-47-6Relevant articles and documents
Halogen Bonding Helicates Encompassing Iodonium Cations
Vanderkooy, Alan,Gupta, Arvind Kumar,F?ldes, Tamás,Lindblad, Sofia,Orthaber, Andreas,Pápai, Imre,Erdélyi, Máté
, p. 9012 - 9016 (2019)
The first halonium-ion-based helices were designed and synthesized using oligo-aryl/pyridylene-ethynylene backbones that fold around reactive iodonium ions. Halogen bonding interactions stabilize the iodonium ions within the helices. Remarkably, the distance between two iodonium ions within a helix is shorter than the sum of their van der Waals radii. The helical conformations were characterized by X-ray crystallography in the solid state, by NMR spectroscopy in solution and corroborated by DFT calculations. The helical complexes possess potential synthetic utility, as demonstrated by their ability to induce iodocyclization of 4-penten-1-ol.
Reversible Multicomponent and Gate Triggered by Stoichiometric Chemical Pulses Commands the Self-Assembly and Actuation of Catalytic Machinery
Biswas, Pronay Kumar,Saha, Suchismita,Gaikwad, Sudhakar,Schmittel, Michael
supporting information, p. 7889 - 7897 (2020/05/25)
The present work demonstrates the operation of a reversible supramolecular gate, i.e., an ensemble of various components linked by chemical communication, which is triggered by stoichiometric chemical inputs and by obeying the AND truth table delivers a s
Toward Cove-Edged Low Band Gap Graphene Nanoribbons
Liu, Junzhi,Li, Bo-Wei,Tan, Yuan-Zhi,Giannakopoulos, Angelos,Sanchez-Sanchez, Carlos,Beljonne, David,Ruffieux, Pascal,Fasel, Roman,Feng, Xinliang,Müllen, Klaus
supporting information, p. 6097 - 6103 (2015/05/27)
Graphene nanoribbons (GNRs), defined as nanometer-wide strips of graphene, have attracted increasing attention as promising candidates for next-generation semiconductors. Here, we demonstrate a bottom-up strategy toward novel low band gap GNRs (Eg/s