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1414941-68-6

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1414941-68-6 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 1414941-68-6 includes 10 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 7 digits, 1,4,1,4,9,4 and 1 respectively; the second part has 2 digits, 6 and 8 respectively.
Calculate Digit Verification of CAS Registry Number 1414941-68:
(9*1)+(8*4)+(7*1)+(6*4)+(5*9)+(4*4)+(3*1)+(2*6)+(1*8)=156
156 % 10 = 6
So 1414941-68-6 is a valid CAS Registry Number.

1414941-68-6Relevant articles and documents

Dibenzothiophene, dibenzofuran and pyridine substituted tetraphenyl silicon derivatives hosts for green phosphorescent organic light-emitting diodes

Ding, Lei,Wang, Jiang-Nan,Liu, Xiang-Yang,Chen, Hua,Igbari, Femi,Liao, Liang-Sheng

, p. 258 - 265 (2019)

We report the application of four novel tetraphenyl silicon derivatives as host materials in phosphorescent organic light-emitting diodes (PHOLEDs). The novel derivatives are; 3-(4-((4-(dibenzo[b,d]thiophen-4-yl)phenyl)diphenylsilyl)- phenyl)pyridine (DBTSiPy3), 4-(4- ((4-(dibenzo[b,d]thiophen-4-yl)phenyl)diphenyl- silyl)phenyl)pyridine (DBTSiPy4), 3-(4-((4-(dibenzo[b,d]furan-4-yl)phenyl)- diphenylsilyl)phenyl)pyridine (DBFSiPy3) and 4-(4-((4-(dibenzo[b,d]furan-4- yl)phenyl)diphenylsilyl)phenyl)pyridine (DBFSiPy4). They were prepared by the introduction dibenzothiophene (DBT)/dibenzofuran (DBF) and pyridine units into bis(4-bromophenyl)diphenylsilane intermediate. The influences of DBT/DBF and the position of nitrogen atom within the pyridine unit (3- vs 4-position) were studied by theoretical calculations and experimental measurements. To evaluate the electroluminescent (EL) performance of these four materials, (2-phenylpyridine) iridium(III) (Ir(ppy)3) based green PHOLEDs were fabricated using the common device structures. DBF substituted materials (DBFSiPy3 and DBFSiPy4) led to efficient green PHOLEDs with notable external quantum efficiencies (EQE) of 22.9% and 21.9% respectively.

HOST MATERIALS FOR OLEDS

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Page/Page column 68, (2012/12/13)

Novel aryl silicon and aryl germanium host materials are described. These compounds improve OLED device performance when used as hosts in the emissive layer of the OLED.

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