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20549-65-9

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20549-65-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 20549-65-9 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,0,5,4 and 9 respectively; the second part has 2 digits, 6 and 5 respectively.
Calculate Digit Verification of CAS Registry Number 20549-65:
(7*2)+(6*0)+(5*5)+(4*4)+(3*9)+(2*6)+(1*5)=99
99 % 10 = 9
So 20549-65-9 is a valid CAS Registry Number.

20549-65-9SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 12, 2017

Revision Date: Aug 12, 2017

1.Identification

1.1 GHS Product identifier

Product name ethyldigermane

1.2 Other means of identification

Product number -
Other names 1-Ethyl-digermane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:20549-65-9 SDS

20549-65-9Upstream product

20549-65-9Downstream Products

20549-65-9Relevant articles and documents

Direct time-resolved study of the gas-phase reactions of germylene with ethyl- and diethylgermane: Absolute rate constants, temperature dependences, and mechanism

Becerra, Rosa,Boganov, Sergey E.,Egorov, Mikhail P.,Krylova, Irina V.,Nefedov, Oleg M.,Walsh, Robin

, p. 1434 - 1440 (2007)

Time-resolved studies of germylene, GeH2, generated by the 193 nm laser flash photolysis of 3,4-dimethyl1 -germacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reactions with ethyl- and diethylgermanes in the gas phase. The reactions were studied over the pressure range 1 -100 Torr with SF6 as bath gas and at five temperatures in the range 297-564 K. Only slight pressure dependences were found for GeH2 + EtGeH3 (399, 486, and 564 K). The high pressure rate constants gave the following Arrhenius parameters: for GeH 2 + EtGeH3, log A = -10.75 ±0.08 and Ea = -6.7 ±0.6 kJ mol-1; for GeH2 + Et 2GeH2, log A = -10.68 ±0.11 and Ea = -6.95 ±0.80 kJ mol-1. These are consistent with fast, near collision-controlled, association processes at 298 K. RRKM modeling calculations are, for the most part, consistent with the observed pressure dependence of GeH2 + EtGeH3. The ethyl substituent effects have been extracted from these results and are much larger than the analogous methyl substituent effects in the SiH2 + methylsilane reaction series. This is consistent with a mechanistic model for Ge - H insertion in which the intermediate complex has a sizable secondary barrier to rearrangement.

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