21331-86-2Relevant articles and documents
NOVEL TRISILYL AMINE DERIVATIVE, METHOD FOR PREPARING THE SAME AND SILICON-CONTAINING THIN FILM USING THE SAME
-
Page/Page column 80; 81; 82, (2015/07/23)
Provided are a novel trisilyl amine derivative, a method for preparing the same, and a siliconcontaining thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.
REACTIONS OF ORGANYLHALOSILANES WITH 1,1,3,3-TETRA- AND HEXAMETHYLDISILAZANE
Basenko, S. V.,Gebel', I. A.,Toryashinova, D. D.,Vitkovskii, V. Yu.,Mirskov, R. G.,Voronkov, M. G.
, p. 1039 - 1042 (2007/10/02)
Organylchlorosilanes, and also SiCl4, decompose 1,1,3,3-tetra- and hexamethyldisilazanes with formation of hitherto unknown organylchlorosilazanes of general formulas R4-nSiCln-1NHSiH(CH3)2 and R4-nSiCln-1NHSi(CH3)3 (n = 2-4) in yields of 54-98percent.The IR and mass spectra of the prepared compounds were studied.