25583-20-4 Usage
Description
Titanium Nitride (TiN) is an extremely hard, brittle, and gold-colored ceramic material known for its high hardness, resistance to wear, and ability to improve the surface properties of various substrates. It has a cubic lattice crystal structure and is characterized by its light-brown powder form when in its chemical state. TiN is insoluble in water and exhibits resistance to oxidation at high temperatures, as well as being resistant to nitric, sulfuric, and hydrochloric acids.
Uses
Used in Alloys and Semiconductor Instruments:
Titanium Nitride is used as a component in alloys and for manufacturing semiconducting instruments, taking advantage of its hardness and resistance to wear.
Used in Cement Production:
TiN is utilized in the production of cements due to its durability and resistance to wear.
Used in Metal Smelting:
Titanium Nitride serves as a material for crucibles in metal smelting processes, benefiting from its high melting point and resistance to high temperatures.
Used in Jewelry:
TiN is employed as a gold-colored surface for jewelry, providing an aesthetically pleasing appearance and increased durability.
Used in High-Performance Ceramic Materials:
Titanium Nitride is incorporated into high-performance ceramic materials for its hardness and wear resistance.
Used in Orthopedic and Dental Implants:
TiN is applied as a coating for orthopedic and dental implants, offering a non-toxic exterior and improved surface properties.
Used in Cutting Tools:
As a protective coating for cutting tools, TiN enhances the tool's hardness, wear resistance, and lifespan, particularly when machining high alloy steels and low alloy steels at medium and high cutting speeds.
Used in Microelectronic Devices:
Titanium Nitride is utilized as a diffusion barrier in microelectronic devices, capitalizing on its ability to improve substrate surface properties and protect cutting and sliding surfaces.
Used in Tool-Steel Cutters and Forming Tools:
TiN coatings are applied to extend the life of tool-steel cutters and forming tools, with the golden-colored coating being deposited through chemical or physical vapor deposition.
Health Hazard
Inhalation breathing in, oral eating or drinking, or dermal exposure skin contact to some organotin compounds has been shown to cause harmful effects in humans, but the main effect will depend on the particular organotin compound. There have been reports of skin and eye irritation, respiratory irritation, gastrointestinal effects, and neurological problems in humans exposed for a short period of time to high amounts of certain organotin compounds. Some neurological problems have persisted for years after the poisoning occurred. Lethal cases have been reported following ingestion of very high amounts. Studies in animals have shown that certain organotins mainly affect the immune system, but a different type primarily affects the nervous system. Yet, there are some organotins that exhibit very low toxicity. Exposure of pregnant rats and mice to some organotin compounds has reduced fertility and caused stillbirth, but scientists are still not sure whether this occurs only with doses that are also toxic to the mother. Some animal studies also suggest that the reproductive organs of males may be affected
Flammability and Explosibility
Nonflammable
Check Digit Verification of cas no
The CAS Registry Mumber 25583-20-4 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 2,5,5,8 and 3 respectively; the second part has 2 digits, 2 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 25583-20:
(7*2)+(6*5)+(5*5)+(4*8)+(3*3)+(2*2)+(1*0)=114
114 % 10 = 4
So 25583-20-4 is a valid CAS Registry Number.
InChI:InChI=1/N.Ti/rNTi/c1-2
25583-20-4Relevant articles and documents
Froben, F. W.,Rogge, F.
, p. 264 - 265 (1981)
Electronic transition moment of the A2∏r-X2∑+ system of TiN
Ito, Haruhiko,Namiki, Kei-Ichi C.,Tojo, Tsutomu,Miyamoto, Yohji,Ohtaka, Masami
, p. 7 - 15 (2002)
The A2∏r-X2∑+ transition of TiN was observed by the dispersed laser induced fluorescence (DLIF) spectroscopy. The relative intensities of the DLIF spectra were analyzed to determine the dependence of the electronic transition moment, Re(r), on the internuclear distance, r, as Re(r) ∝ {1 - 0.281(26)r} (1.380 ? ≤ r ≤ 1.823 ?). This r-dependence was analyzed simultaneously with the reported values of the spin-orbit constants for A2∏r and the hyperfine-coupling constants for X2∑+ to evaluate the ionic character of the Ti≡N bond, the 4s atomic character in the 9σ orbital of X2∑+, and the 4p atomic character in the 4π orbital of A2∏r. These characters were confirmed to be in accordance with the reported theoretical prediction. A strong r-dependence was indicated for the 3d-4p mixing in the A2∏r state due to the configuration mixing of the Ti(3d4) and Ti(3d34p) states at a large internuclear distance.
