3555-47-3Relevant articles and documents
Trimethylsilyl Derivatives for the Study of Silicate Structures. Part 7. Calcium Silicate Structures
Calhoun, Harry P.,Masson, Charles R.
, p. 1282 - 1291 (1980)
A detailed study was made of the yield and products of trimethylsilylation of calcium orthosilicate (Ca2), rankinite (Ca3), and pseudowollastonite (Ca3) under various experimantal conditions.With hexamethyldisiloxane, chlorotrimethylsilane, and isopropylalcohol as reagents, in the absence of added water Ca2 yielded predominantly SiO4(SiMe3)x(Pri)4-x (x = 1-4) and a lesser amount of Si2O7(SiMe3)x(Pri)6-x (x = 2-6), Ca3 gave predominantly Si2O7(SiMe3)x(Pri)6-x (x = 2-6), and Ca3 gave predominantly Si3O9(SiMe3)x(Pri)6-x (x = 2-6) and Si3O10(SiMe3)x(Pri)8-x (x = 3-8).Mixed trimethylsilyl-isopropyl derivatives were converted to the fully trimethylsilylated derivatives SiO4(SiMe3)4, Si2O7(SiMe3)6, and Si3O10(SiMe3)8 on treatment with Amberlyst 15 ion-exchange resin in the presence of hexamethyldisiloxane.In the trimethylsilylation of Ca2 reaction of mineral itself is complete within ca. 6 min at room temparature, under the conditions employed, and the majority of unwanted side reactions which yield Si2O7 and Si3O10 derivatives occur during the first 3-4 min.Side reactions may be suppressed by increasing the proportion of isopropyl alcohol and decreasing that of Ca2 in the reagents.The presence of both isopropyl alcohol and chlorotrimethylsilane is necessary for reaction to occur.Isopropyl alcohol may be replaced by either ethyl alcohol or water, altough the yield is reduced.When isopropyl alcohol is replaced by water, only the fully trimethylsilylated derivatives are formed.The mechanism of the reaction is discussed and experimental conditions are described which gives highest yields of the desired products.
MANUFATURING METHOD FOR TETRAKIS(TRIALKYLSILYLOXY) SILANE, SEMICONDUCTOR THIN FILM HAVING POLYMER DERIVED FROM TETRAKIS(TRIALKYLSILYLOXY) SILANE, AND MANUFATURING METHOD FOR SEMICONDUCTOR THIN FILM
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Paragraph 0064; 0097-0102; 0104, (2019/10/11)
Provided by the present invention are: a method for producing tetrakis (trialkylsilyloxy) silane represented by chemical formula 3, Si(OSiR^2_3)_4, including reaction between a compound represented by chemical formula 1, Si(OR^1)_n(OSiR^2_3)_(4-n), and a compound represented by chemical formula 2, SiX(R^2)_3; a semiconductor thin film including a polymer derived from tetrakis (trialkylsilyloxy) silane; and a method of producing a semiconductor thin film. The definitions of formulas 1 and 2 are as described in the specification. The present invention is able to produce tetrakis (trialkylsilyloxy) silane having high purity.COPYRIGHT KIPO 2019
A four (three-siloxy) silicon synthetic method (by machine translation)
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Paragraph 0009; 0010; 0011; 0012; 00013; 0014; 0015-0022, (2018/03/28)
This invention relates to a four (three-siloxy) silicon synthetic method, which belongs to the technical field of fine chemicals. The invention is firstly to silicon tetrachloride and trimethylchlorosilane according to the proportion in the input to the reactor, adding catalyst, stirring ice-[...] water reaction reactant layered, washing, drying and then distilled, to obtain four (three-siloxy) silicon product. The invention four (three-siloxy) silicon product content is high, the yield is high, production cost is very low, few by-products, environmental pollution is small. (by machine translation)
