37231-03-1Relevant articles and documents
Electrochemistry of Layered Semiconducting AIIIBVI Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)
Wang, Yong,Sz?k?lová, Katerina,Nasir, Muhammad Zafir Mohamad,Sofer, Zdenek,Pumera, Martin
, p. 2634 - 2642 (2019)
Layered AIIIBVI chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered AIIIBVI chalcogenides like InSe and GaSe are composed of X?M?M?X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at ?1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)6]3?/4? redox probe using cyclic voltammetry (vs. Ag/AgCl) at the scan rate of 100 mV s?1. It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest kobs0 obtained (3.7×10?3 cm s?1). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of ?10 mA cm?2. However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered AIIIBVI indium monochalcogenides which would influence potential applications.
Madhava, M. R.,Bandyopadhyay, A. K.,Bhat, H. L.
, (1981)
Catalyzed growth of a metastable InS crystal structure as colloidal crystals [21]
Hollingsworth, Jennifer A.,Poojary, Damadora M.,Clearfield, Abraham,Buhro, William E.
, p. 3562 - 3563 (2000)
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Low-temperature photoluminescence spectra of InS single crystals
Gasanly,Aydinli
, p. 797 - 799 (1997)
Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5-860 nm and in the temperature range 8.5-293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm (C-band). The A- and B-bands are due to radiative transitions from the donor level at 0.01 eV below the bottom of the conduction band to the valence band and from the donor level at 0.06 eV below the bottom of the conduction band to the acceptor level 0.12 eV above the top of the valence band, respectively. The proposed energy-level scheme allows us to interpret the recombination processes in InS single crystals.
Temperature dependence of the Raman-active phonon frequencies in indium sulfide
Gasanly,Oezkan,Aydinli,Yilmaz
, p. 231 - 236 (1999)
The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the Ag intralayer optical modes show that Raman frequency shift results
