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4098-97-9

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4098-97-9 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 4098-97-9 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 4,0,9 and 8 respectively; the second part has 2 digits, 9 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 4098-97:
(6*4)+(5*0)+(4*9)+(3*8)+(2*9)+(1*7)=109
109 % 10 = 9
So 4098-97-9 is a valid CAS Registry Number.

4098-97-9Relevant articles and documents

An Electroreductive Approach to Radical Silylation via the Activation of Strong Si-Cl Bond

Lu, Lingxiang,Siu, Juno C.,Lai, Yihuan,Lin, Song

supporting information, p. 21272 - 21278 (2020/12/21)

The construction of C(sp3)-Si bonds is important in synthetic, medicinal, and materials chemistry. In this context, reactions mediated by silyl radicals have become increasingly attractive but methods for accessing these intermediates remain limited. We present a new strategy for silyl radical generation via electroreduction of readily available chlorosilanes. At highly biased potentials, electrochemistry grants access to silyl radicals through energetically uphill reductive cleavage of strong Si-Cl bonds. This strategy proved to be general in various alkene silylation reactions including disilylation, hydrosilylation, and allylic silylation under simple and transition-metal-free conditions.

Conductive molecular silicon

Klausen, Rebekka S.,Widawsky, Jonathan R.,Steigerwald, Michael L.,Venkataraman, Latha,Nuckolls, Colin

supporting information; experimental part, p. 4541 - 4544 (2012/04/23)

Bulk silicon, the bedrock of information technology, consists of the deceptively simple electronic structure of just Si-Si σ bonds. Diamond has the same lattice structure as silicon, yet the two materials have dramatically different electronic properties. Here we report the specific synthesis and electrical characterization of a class of molecules, oligosilanes, that contain strongly interacting Si-Si σ bonds, the essential components of the bulk semiconductor. We used the scanning tunneling microscope-based break-junction technique to compare the single-molecule conductance of these oligosilanes to those of alkanes. We found that the molecular conductance decreases exponentially with increasing chain length with a decay constant β = 0.27 ± 0.01 A-1, comparable to that of a conjugated chain of C = C π bonds. This result demonstrates the profound implications of σ conjugation for the conductivity of silicon.

The preparation and analysis of the phenyldimethylsilyllithium reagent and its reaction with silyl enol ethers

Fleming, Ian,Roberts, Richard S.,Smith, Stephen C.

, p. 1209 - 1214 (2007/10/03)

Phenyldimethylsilyllithium is formed from lithium and phenyldimethylsilyl chloride by slow cleavage of the Si-Si bond of 1,1,2,2-tetramethyl-1,2-diphenyldisilane after the rapid formation of the disilane. 1,1,2,2-Tetramethyl-1,2-diphenyldisiloxane, produced from the silyl chloride by reaction with oxides and hydroxides on the lithium metal surface, is cleaved by dimethyl(phenyl)silyllithium to give lithium dimethyl(phenyl)silanoxide. Dimethyl(phenyl)silyllithium reacts with 1,2-dibromoethane to give dimethyl(phenyl)silyl bromide, which is so rapidly consumed by excess silyllithium reagent that it does not interfere with the double titration used to measure its concentration. Dimethyl(phenyl)silane, produced by protonation of the silyllithium reagent, is also consumed by the silyllithium reagent to give 1,1,2,2-tetramethyl-1,2-diphenyldisilane, which regenerates the silyllithium reagent, as long as lithium is still present. By-products in the preparation of dimethyl(phenyl)silyllithium include 1,3-diphenyl-1,1,2,2,3,3-hexamethyltrisilane, dimethyldiphenylsilane and 1,4-bis[dimethyl(phenyl)-silyl]benzene. Dimethyl(phenyl)silyllithium displaces the silyl group from the tert-butyldimethylsilyl enol ether of cyclohexanone to give the lithium enolate under relatively mild conditions.

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