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54995-24-3

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54995-24-3 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 54995-24-3 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 5,4,9,9 and 5 respectively; the second part has 2 digits, 2 and 4 respectively.
Calculate Digit Verification of CAS Registry Number 54995-24:
(7*5)+(6*4)+(5*9)+(4*9)+(3*5)+(2*2)+(1*4)=163
163 % 10 = 3
So 54995-24-3 is a valid CAS Registry Number.

54995-24-3SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 13, 2017

Revision Date: Aug 13, 2017

1.Identification

1.1 GHS Product identifier

Product name 4,5-dimercapto-1,3-dithiole-2-thione, sodium salt

1.2 Other means of identification

Product number -
Other names 2-thioxo-1,3-dithiole-4,5-dithiolato sodium

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:54995-24-3 SDS

54995-24-3Upstream product

54995-24-3Relevant articles and documents

Fabrication and operation of monolayer mott FET at room temperature

Yang, Fan,Suda, Masayuki,Yamamoto, Hiroshi M.

supporting information, p. 1259 - 1266 (2017/11/24)

Self-assembled monolayer FET based on a TTF derivative is described (FET = field-effect-transistor, TTF = tetrathiafulvalene). The molecule is anchored on an alumina dielectric layer through covalent bonding of a phosphonic acid linker. A p-type monolayer FET device is achieved and subsequent chemical doping of this monolayer with F4TCNQ dopants results in an ambipolar device. (F4TCNQ = 2,3,5,6-Tetrafluoro- 7,7,8,8-tetracyanoquinodimethane) Several strange behaviors including a gate voltage shift upon doping seem to be consistent with organic monolayer Mott FET. Finally, temperature dependence of the FET performance, which also fit the anticipated Mott FET behavior, is discussed.

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