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6063-72-5

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6063-72-5 Usage

General Description

Trimethyl[(trimethylsilyl)imino]-lambda~5~-phosphane is a chemical compound with the molecular formula of C9H27NPSi. It is a phosphorus-containing compound that features a phosphane group with a silyl-imino substituent. trimethyl[(trimethylsilyl)imino]-lambda~5~-phosphane is used as a ligand in coordination chemistry, where it can coordinate to metal ions and form stable complexes. Trimethyl[(trimethylsilyl)imino]-lambda~5~-phosphane has potential applications in catalysis and organometallic chemistry due to its ability to coordinate to transition metals and facilitate various chemical reactions. Additionally, it may serve as a precursor for the synthesis of other phosphorus-containing compounds with unique properties and reactivities.

Check Digit Verification of cas no

The CAS Registry Mumber 6063-72-5 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 6,0,6 and 3 respectively; the second part has 2 digits, 7 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 6063-72:
(6*6)+(5*0)+(4*6)+(3*3)+(2*7)+(1*2)=85
85 % 10 = 5
So 6063-72-5 is a valid CAS Registry Number.

6063-72-5SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 20, 2017

Revision Date: Aug 20, 2017

1.Identification

1.1 GHS Product identifier

Product name p,p,p-trimethyl-N-(trimethylsilyl)-Phosphine imide

1.2 Other means of identification

Product number -
Other names -

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:6063-72-5 SDS

6063-72-5Relevant articles and documents

RAW MATERIAL FOR FORMING THIN FILM AND MANUFACTURING METHOD FOR THIN FILM

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Paragraph 0064, (2016/12/12)

PROBLEM TO BE SOLVED: To provide a raw material for forming a thin film excellent in thermal stability, reactivity with reactive gas and step coverage property and capable of being applied to an ALD method, and to provide a raw material for forming a thin film capable of providing the thin film having the content of phosphorus of 10 to 20 mass%. SOLUTION: A raw material for forming a thin film has a silicon compound represented by the general formula (1). In the formula (1), R1 to R3 represent each independently an alkyl group having 1 to 4 carbon atoms and X represents a monovalent organic residue having a phosphorus element. COPYRIGHT: (C)2015,JPOandINPIT

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