61219-26-9Relevant articles and documents
Growth and magnetic properties of epitaxial MnAs thin films grown on InP(001)
Yokoyama,Ohya,Tanaka
, (2006)
Epitaxial ferromagnetic MnAs thin films have been grown by molecular-beam epitaxy on semi-insulating InP(001) substrates. The MnAs c axis (MnAs[0001]) lies along the InP[110] axis, and the easy magnetization axis is in-plane, along the MnAs[1120] axis, which is parallel to the InP[110] axis. The ferromagnetic transition temperature of the MnAs films on InP(001) was estimated to be 321 K. The structural and magnetic properties of MnAs thin films grown on InP(001) substrates are similar to those of type-A MnAs films grown on GaAs(001) substrates. The feasibility of growing monocrystalline ferromagnetic layers on InP(001) will open up the possibility of monolithic integration of magnetic functions with InP-based optoelectronics devices.
State diagram of the Zn3As2-MnAs system
Marenkin,Fedorchenko,Trukhan,Trukhanov,Shoukavaya,Vasil'Ev,Zhaludkevich
, p. 1578 - 1582 (2015)
The Zn3As2-MnAs system was studied by X-ray powder diffraction, differential thermal, and microstructural analyses. This system is of the eutectic type with the eutectic coordinates (30 wt % (50 mol %) Zn3As2, 70 wt % (50 mol %) MnAs, T melt = 815°C). The MnAs solubility boundary on the side of Zn3As2 is 10 wt %. Zn3As2 alloys containing more than 10 wt % MnAs are ferromagnetic with T c ~ 320 K. Their magnetization increases with increasing MnAs content.
First-order phase transition at the curie temperature in MnAs and MnAs 0.9Sb0.1
Ishikawa, Fumihiro,Koyama, Keiichi,Watanabe, Kazuo,Asano, Tetsuya,Wada, Hirofumi
, (2006)
Structural transformations of MnAs and MnAs0.9Sb0.1 were investigated by X-ray diffraction in high magnetic fields up to 5 T. The temperature dependence of the magnetization was measured in a magnetic field of 0.01 T and the Curie temperature TC was determined to be 315 K for MnAs and 290 K for MnAs0.9Sb0.1 during heating process. For both compounds, a metamagnetic transition from a paramagnetic to a ferromagnetic state was observed above TC. The X-ray diffraction profile at 319 K for MnAs showed a single phase of an orthorhombic MnP-type structure in zero field. An applied magnetic field of 3 T induced the appearance of a hexagonal NiAs-type structure. On further increase of the magnetic field, a single phase with a hexagonal structure was realized above 3.5 T in a forced-ferromagnetic state. The X-ray diffraction profile at 295 K for MnAs 0.9Sb0.1 showed a hexagonal NiAs-type structure. The coexistence of ferromagnetic and paramagnetic states with different lattice parameters was confirmed in a magnetic field of 2.5 T. The volume expansion induced by a magnetic field was found to be 2.1% for MnAs and 1.1% for MnAs 0.9Sb0.1. 2006 The Physical Society of Japan.
Magnetic out-of-plane component in MnAs/GaAs(001)
Ney,Hesjedal,Pampuch,Mohanty,Das,Daeweritz,Koch,Ploog
, p. 2850 - 2852 (2003)
The magnetic out-of-plane component in MnAs/GaAs film was discussed. Its temperature dependence was substantially different from the dominating in-plane magnetization. The analysis showed that the out-of-plane component was due to small isolated magnetic
Hagedorn, Martin F.,Jeitschko, Wolfgang
, (1995)
Carbon-doping effects on the metamagnetic transition and magnetocaloric effect in MnAsCx
Cui,Liu,Zhang,Li,Liu,Yang,Zhao,Zhang
, p. 2223 - 2226 (2010)
Carbon doping effects in MnAs alloys have been investigated. More carbon doping in MnAs alloys leads to lower Curie temperature, larger thermal hysteresis and sharper slope of the dependence of critical field on reduced temperature due to severe lattice distortion. The obtained maximum of magnetic entropy change for a field change of 5 T is about 12.8 J kg-1 K-1 near room temperature, and increases with more doping carbon content to about 22.4 J kg-1 K-1 in MnAsC0.03 and 13.2 J kg-1K-1 in MnAsC0.05.
Fjellvaag, H.,Hochheimer, H. D.,Hoenle, W.
, p. 293 - 296 (1986)
Formation of the α''-phase and study of the solubility of Mn in Cd3As2
Ril,Marenkin,Volkov,Oveshnikov,Kozlov
supporting information, (2021/10/04)
We studied the effect of Mn on the structure and properties of Cd3?xMnxAs2 crystals with x = 0–0.24, synthesized by direct fusion of high-purity elements. Obtained X-ray diffraction patters suggest that the incorporation of Mn promotes a structural phase transition from primary α-Cd3As2 (x = 0) phase to the α''– Cd3As2 (x = 0.24) phase, while at intermediate compositions both phases can coexist. In addition, the increase of Mn content results in the decrease of lattice cell parameters, which effectively saturates for x > 0.13. Microstructural, calorimetric and magnetometry studies suggest that at high Mn content (x = 0.24) secondary MnAs phase appears. Using obtained results, we estimated the solubility limit of Mn in Cd3As2 as x~0.13, which corresponds to the formation of ternary Cd3?xMnxAs2 compound where Cd atoms are partially substituted by Mn. Formation of ternary compound was also suggested by the results for Cd3As2 + MnAs composite systems, where we also observed the presence of CdAs2 phase, which is a byproduct of corresponding reaction. Additional studies suggested that the CdAs2 phase formation in composite system can be prevented if one uses the Cd3?xMnxAs2 compound instead of pure Cd3As2 as a matrix material.
Exotic Compositional Ordering in Manganese–Nickel–Arsenic (Mn-Ni-As) Intermetallics
Fjellv?g, ?ystein Slagtern,Fjellv?g, Helmer,Gonano, Bruno,Pelloquin, Denis,Saha, Dipankar,Steciuk, Gwladys
supporting information, p. 22382 - 22387 (2020/10/15)
In this work we benefited from recent advances in tools for crystal-structure analysis that enabled us to describe an exotic nanoscale phenomenon in structural chemistry. The Mn0.60Ni0.40As sample of the Mn1?xNixAs solid solution, exhibits an incommensurate compositional modulation intimately coupled with positional modulations. The average structure is of the simple NiAs type, but in contrast to a normal solid solution, we observe that manganese and nickel segregate periodically at the nano-level into ordered MnAs and NiAs layers with thickness of 2–4 face-shared octahedra. The detailed description was obtained by combination of 3D electron diffraction, scanning transmission electron microscopy, and neutron diffraction. The distribution of the manganese and nickel layers is perfectly described by a modulation vector q=0.360(3) c*. Displacive modulations are observed for all elements as a consequence of the occupational modulation, and as a means to achieve acceptable Ni–As and Mn–As distances. This modulated evolution of magnetic MnAs and non-magnetic NiAs-layers with periodicity at approximately 10 ? level, may provide an avenue for spintronics.
