61307-92-4Relevant articles and documents
Surface Far-Ultraviolet Photochemistry of Ethyl Chloride on GaAs(1000)
Liberman, Vladimir,Nooney, Matthew G.,Amata, Richard J.,Martin, Richard M.
, p. 2261 - 2269 (2007/10/02)
The photoinduced dissociation at 193 nm of monolayer ethyl chloride (EtCl) was studied on the Ga-rich GaAs(100) (8x2)Ga surface at 90 K.Photodepletion of EtCl is efficient, with a cross section of 6 x 10-19 cm2.Sixty percent of the EtCl molecules depleted by irradiation give ethyl groups bonded to the surface.The ethyl groups are stable up to ca. 500 K, which is the onset of thermal desorption of the products.The thermal desorption products are C2H4, C2H5, C2H6, H2 and GaCl.The hydrocarbon product distribution is approximately 70percent C2H4, 20percent C2H6, and 10percent C2H5 radicals.Experiments with CD3CH2Cl provide evidence that ethylene is formed by β-hydride elimination.The zero-coverage first-order kinetic parameters for this reaction are approximately Ea = 100 kJ/mol and A = 4.4 x 107 s-1.Comparison with the gas-phase photodissociation cross section indicates that the photodepletion is primarily due to substrate-mediated processes rather than to direct photodissociation of EtCl.The most probable mechanism involves photogenerated electron transport to the surface followed by electron dissociative attachment to EtCl.
