7333-23-5

Basic information

• Product Name: 2,2,6-trimethylheptane-3,5-dione
• Synonyms: 2,2,6-trimethylheptane-3,5-dione;2,2,6-Trimethyl-3,5-heptadione;2,2,6-Trimethyl-3,5-heptanedione;Isobutyrylpivaloylmethane
• CAS NO: 7333-23-5
• Molecular Formula: C₁₀H₁₈O₂
• Molecular Weight: 170.24872
• EINECS: 230-833-7
• Mol File: 7333-23-5.mol
• Article Data: 5

Chemical Properties

• Boiling Point: 226.1°C at 760 mmHg
• Flash Point: 81.9°C
• Appearance: /
• Density: 0.904g/cm³
• Vapor Pressure: 0.0835mmHg at 25°C
• Refractive Index: 1.427
• CAS DataBase Reference: 2,2,6-trimethylheptane-3,5-dione(CAS DataBase Reference)
• NIST Chemistry Reference: 2,2,6-trimethylheptane-3,5-dione(7333-23-5)
• EPA Substance Registry System: 2,2,6-trimethylheptane-3,5-dione(7333-23-5)

Safety Data

• Hazardous Substances Data: 7333-23-5(Hazardous Substances Data)

Usage

General Description

2,2,6-trimethylheptane-3,5-dione, also known as acetylacetone, is a organic compound with the molecular formula C5H8O2. It is a colorless or pale yellow liquid that is used as a solvent, in the production of rubber and plastics, and as an intermediate in the synthesis of pharmaceuticals and other organic compounds. Acetylacetone has a fruity odor and is flammable, and it is also used as a reagent in chemical reactions, such as the formation of metal acetylacetonates and the synthesis of heterocycles. It is considered to be a moderately toxic substance and should be handled with caution, with exposure to the eyes, skin, and respiratory system to be avoided.

InChI:InChI=1/C10H18O2/c1-7(2)8(11)6-9(12)10(3,4)5/h7H,6H2,1-5H3

Upstream product

• 563-80-4 3-methyl-butan-2-one 
• 2648-71-7 3-bromo-3-methyl-2-butanone 
• 75-97-8 3,3-dimethyl-butan-2-one 
• 97-62-1 Ethyl isobutyrate 
• 60-29-7 diethyl ether 
• 598-98-1 Methyl pivalate 
• 3938-95-2 2,2-dimethyl-propanoic acid ethyl ester 

Downstream Products

• 92916-72-8 Benzoic acid [1-isopropyl-4,4-dimethyl-3-oxo-pent-(E)-ylidene]-hydrazide 

Relevant articles and documents

K2CO3-Catalyzed Synthesis of 2,5-Dialkyl-4,6,7-tricyano-Decorated Indoles via Carbon-Carbon Bond Cleavage

We describe a novel method to synthesize 2,5-dialkyl-4,6,7-tricyanoindole derivatives from a base-catalyzed reaction of 1,3-diketones with fumaronitrile. The reaction proceeds by the condensation of two molecules of fumaronitrile and one molecule of 1,3-diketone in a remarkable process that involves the cleavage of one C(sp3)-C(sp2) bond in 1,3-diketones and the formation of one carbon-nitrogen bond and four carbon-carbon bonds to construct both the aryl and pyrrole rings of the indole in one step.

PROCESSES FOR PREPARING β-DIKETONE COMPOUND, METAL COMPLEX THEREOF AND METALLIC COMPOUND

Disclosed is a process for preparing a β-diketone compound such as 2,6-dimethyl-3,5-heptanedione, which comprises reacting an ester compound such as an alkyl isobutyrate with a ketone compound such as 3-methylbutanone in the presence of an alkali metal alkoxide as a catalyst. The process comprises a step 1 in which an ester compound CR1R2R3COOQ is reacted with a ketone compound CR4R5R6COCH2R7 using an alkali metal alkoxide catalyst to give a β-diketone compound CR1R2R3COCHR4R5R6. (In the formulae, R7 is hydrogen or an alkyl group of 1 to 4 carbon atoms while others are each independently hydrogen or an alkyl group of 1 to 3 carbon atoms, and at least one of R1 to R6 is hydrogen.)

Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same

Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal β-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as intearated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holoaraphic storage media.