77-32-7 Usage
General Description
5,5-diethyl-2-thiobarbituric acid is a chemical compound with the molecular formula C9H12N2O2S. It is a derivative of barbituric acid and contains a thiobarbituric acid group, which gives it unique chemical properties. 5,5-diethyl-2-thiobarbituric acid is commonly used in organic synthesis and pharmaceutical research as a building block for the synthesis of various other compounds. It has been studied for its potential pharmacological activities, including sedative and hypnotic effects, and has been investigated for its potential use in the treatment of neurological disorders. Additionally, 5,5-diethyl-2-thiobarbituric acid has antibacterial and antifungal properties, making it of interest for the development of new antimicrobial agents.
Check Digit Verification of cas no
The CAS Registry Mumber 77-32-7 includes 5 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 2 digits, 7 and 7 respectively; the second part has 2 digits, 3 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 77-32:
(4*7)+(3*7)+(2*3)+(1*2)=57
57 % 10 = 7
So 77-32-7 is a valid CAS Registry Number.
InChI:InChI=1/C8H12N2O2S/c1-3-8(4-2)5(11)9-7(13)10-6(8)12/h3-4H2,1-2H3,(H2,9,10,11,12,13)
77-32-7Relevant articles and documents
Novel thiobarbituric acid derivatives, polymer including repeating unit derived therefrom, bottom anti-reflection coating composition containing the same and process for forming resist pattern using the composition
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Paragraph 0114-0117, (2017/08/23)
The present invention relates to novel thiobarbituric acid derivatives, a polymer comprising a repeating unit derived from the same, a bottom anti-reflective coating (BARC) composition containing the same, and a process for forming resist patterns using the same. Specifically, the present invention relates to a BARC composition comprising thiobarbituric acid derivatives or a polymer comprising a repeating unit derived from the same, which prevents the reflection at an underlying layer in a lithographic process, and has fast dry etching rate, and thus is useful for semiconductor ultrafine patterning; and to a process for forming resist patterns using the same.COPYRIGHT KIPO 2017