78151-58-3

Basic information

• Product Name: N,N'-DIOCTYL-3,4,9,10-PERYLENEDICARBOXIMIDE
• Synonyms: N,N'-DIOCTYL-3,4,9,10-PERYLENEDICARBOXIMIDE;PTCDI-C8;N,N'-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide;Perylene-3,4,9,10-tetracarboxylic acid N,N'-dioctylimide;N,N'-Di-n-octyl-3,4,9,10-perylenetetracarboxylic DiiMide;N,N'-Dioctyl-3,4,9,10-perylenedicarboxiMide 98%;2,9-dioctylanthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-1,3,8,10(2H,9H)-tetraone;N,N'-Di-n-octyl-3,4,9,10-perylenetetracarboxylic Diimide
• CAS NO: 78151-58-3
• Molecular Formula: C₄₀H₄₂N₂O₄
• Molecular Weight: 614.77
• Product Categories: OTFT/OFET/OPV Materials
• Mol File: 78151-58-3.mol
• Article Data: 18

Chemical Properties

• Melting Point: >300 °C
• Boiling Point: 775.4±33.0 °C(Predicted)
• Appearance: /
• Density: 1.240±0.06 g/cm3(Predicted)
• PKA: -2.25±0.20(Predicted)
• CAS DataBase Reference: N,N'-DIOCTYL-3,4,9,10-PERYLENEDICARBOXIMIDE(CAS DataBase Reference)
• NIST Chemistry Reference: N,N'-DIOCTYL-3,4,9,10-PERYLENEDICARBOXIMIDE(78151-58-3)
• EPA Substance Registry System: N,N'-DIOCTYL-3,4,9,10-PERYLENEDICARBOXIMIDE(78151-58-3)

Safety Data

• Hazard Codes: Xi
• Statements: 36/37/38
• Safety Statements: 26
• WGK Germany: 3
• Hazardous Substances Data: 78151-58-3(Hazardous Substances Data)

Usage

Uses

PTCDI-C8 can be used as an organic semiconductor to fabricate a wide range of opto-electronic based devices such as light emitting diodes, photovoltaic cells, and field effect transistors.

Upstream product

• 111-86-4 n-Octylamine 
• 128-69-8 perylene-3,4,9,10-tetracarboxylic acid 3,4:9,10-dianhydride 
• 39061-46-6 N-n-Octyl-naphthalsaeureimid 

Downstream Products

• 1207954-40-2 N,N’-bis-n-octyl-2,5,8,11-tetra-phenethyl-3,4,9,10-perylenediimide 
• 209111-67-1 N,N'-bis(n-octyl)-1,7-dibromo-perylene-3,4:9,10-bis(dicarboximide) 
• 1256572-78-7 C₅₄H₅₀N₂O₆ 

Relevant articles and documents

Sulfur-substituted perylene diimides: Efficient tuning of LUMO levels and visible-light absorption: Via sulfur redox

A series of sulfide and sulfone substituted perylene diimides (PDIs) with different LUMO levels covering a range of 0.72 eV were synthesized through simple sulfur redox chemistry. The LUMO level of phenylsulfone substituted PDI reached a record-breaking-4

Dinaphthothiepine Bisimide and Its Sulfoxide: Soluble Precursors for Perylene Bisimide

The synthesis and properties of dinaphtho[1,8-bc:1′,8′-ef]thiepine bisimide (DNTBI) and its oxides are described. Their molecular design is conceptually based on the insertion of a sulfur atom into the perylene bisimide (PBI) core. These sulfur-inserted PBI derivatives adopt nonplanar structures, which significantly increases their solubility in common organic solvents. Upon electron injection, light irradiation, or heating, DNTBI and its sulfoxides undergo sulfur extrusion reactions to furnish PBI. The photoinduced and thermal sulfur extrusion reactions proceed almost quantitatively. This unique reactivity enabled the fabrication of a high-performance solution-processed n-type organic field-effect transistor with an electron mobility of up to 0.41 cm2 V-1 s-1.

Highly fluorescent free-standing films assembled from perylenediimide microcrystals for boosting aniline sensing

Molecular assembly has emerged as a key protocol for designing functional materials, although building in task-specific applications remains challenging. Here, a simple solvent-diffusion fabrication of highly fluorescent free-standing films (FFSFs) obtained from perylenediimide (PDI) microcrystals is described. The high fluorescence intensity of the resulting FFSFs follows from the mode of solid-state packing of the PDI molecules. The porous, crystalline FFSFs provide increased surface area and enable unobstructed diffusion of guest molecules for boosting aniline sensing with low detection limit, high selectivity and reversibility. Density functional theory (DFT) calculations indicate that the fluorescence quenching is caused by photoinduced electron transfer (PET). The new FFSFs furnish amplified discrimination of analytes and represent a major step ahead toward the rational synthesis of assembled sensing materials.