78823-98-0Relevant articles and documents
COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD
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Paragraph 0312; 0316-0319, (2020/08/22)
The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.
Studies on the pyrazine complexes of some diaryltellurium dihalides
Narwal, Jitender Kumar,Chhabra, Shashi,Malik, Rajesh Kumar,Garg, Sapana,Verma
, p. 1339 - 1349 (2014/05/06)
Nine new Pyrazine Complexes of diaryltelluriumdihalides, R 2TeX2.Pyz (R =p-methoxyphenyl, p-hydroxyphenyl and 3-methyl- 4-hydroxy phenyl; X=Cl, Br, I; Pyz = pyrazine) have been prepared by reactions of diaryltelluriumdihalides with pyrazine in 1:1 molar ratio. These complexes have been characterized by elemental analysis, conductance and cryoscopic measurements, infrared and proton magnetic resonance spectral studies. Conductance studies in nitrobenzene, acetone and acetonitrile predict their non-electrolyte type behaviour in these solvents, which is well supported by cryoscopic data in nitrobenzene. IR and 1H NMR studies suggest the unidentate nature of pyrazine in these complexes, involving only one nitrogen atom in coordination. Thus, tellurium in R2TeX2.Pyz complexes attains a coordination number of five probably in a square pyramidal.