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91861-70-0

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91861-70-0 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 91861-70-0 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 9,1,8,6 and 1 respectively; the second part has 2 digits, 7 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 91861-70:
(7*9)+(6*1)+(5*8)+(4*6)+(3*1)+(2*7)+(1*0)=150
150 % 10 = 0
So 91861-70-0 is a valid CAS Registry Number.

91861-70-0Relevant articles and documents

FeCl3-Mediated Oxidative Spirocyclization of Difluorenylidene Diarylethanes Leading to Dispiro[fluorene-9,5′-indeno[2,1-a]indene-10′,9″-fluorene]s

Zhao, Jian,Xu, Zhanqiang,Oniwa, Kazuaki,Asao, Naoki,Yamamoto, Yoshinori,Jin, Tienan

, p. 259 - 263 (2016)

A novel FeCl3-mediated oxidative spirocyclization for construction of a new class of di-spirolinked π-conjugated molecules, dispiro[fluorene-9,5′-indeno[2,1-a]indene-10′,9″-fluorene]s (DSFIIFs), has been reported. The combination of FeCl3

COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

-

, (2017/01/26)

An organic light-emitting device includes a first electrode; a second electrode facing the first electrode; and an organic emission layer between the first electrode and the second electrode. The organic emission layer may include a compound represented by Formula 1: wherein Formula 1 contains an indenoindenyl moiety. The compound may increase hole mobility in the device when used as a hole transport and/or hole injection material, thereby improving its lifetime, current, voltage, and luminescent characteristics.

Thermally evaporable 5,10-dihydroindeno[2,1-a]indenes form efficient interfacial layers in organic solar cells

Wei, Yi,Liu, Pei-Jun,Lee, Ren-Hao,Chen, Chih-Ping

, p. 7897 - 7904 (2015/03/04)

In this study, we synthesized several bis(diarylamino)dihydroindenoindene derivatives for use as small-molecule hole transporting materials (HTMs) in organic photovoltaics. Because of their photophysical, electrochemical, and morphological properties, as well as their surface energies and device structures, these barely soluble HTMs prohibited interfacial mixing during the subsequent deposition through spin-coating of the active layer. An optimized device having the structure indium tin oxide/HTM/P3HT:PCBM/Ca/Al operated with a fill factor of 67.8%.

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