15112-89-7 Usage
Description
TRIS(DIMETHYLAMINO)SILANE, also known as TDMAS, is an organosilicon compound that serves as a versatile precursor for the deposition of various thin films, including Si oxynitride, carbonitride, nitride, and oxide. It is characterized by its suitable melting point and vapor pressure, which allow for efficient vapor deposition at low substrate temperatures (<150°C).
Uses
Used in Thin Film Deposition Industry:
TRIS(DIMETHYLAMINO)SILANE is used as a vapor deposition precursor for the formation of Si oxynitride, carbonitride, nitride, and oxide thin films. It is favored for its ability to deposit these films at low substrate temperatures, making the process more energy-efficient and cost-effective.
Used in Electronics and Optoelectronics Industry:
TRIS(DIMETHYLAMINO)SILANE is used as a material for creating multicomponent silicon-containing thin films, which are essential in the development of electronic and optoelectronic devices. The low-temperature deposition capability of TDMAS allows for the fabrication of high-quality films without damaging sensitive components.
Used in Solar Energy Industry:
In the solar energy sector, TRIS(DIMETHYLAMINO)SILANE is utilized as a precursor for depositing thin-film solar cells, such as silicon-based or other compound semiconductor materials. The low-temperature deposition process is advantageous for producing high-performance solar cells with minimal thermal stress on the substrate.
Used in Chemical Vapor Deposition (CVD) Processes:
TRIS(DIMETHYLAMINO)SILANE is used as a precursor in CVD processes for depositing various types of thin films with precise control over film composition and properties. Its suitable vapor pressure and melting point make it an ideal candidate for CVD applications in various industries, including electronics, optoelectronics, and solar energy.
Please inquire for quantity, pricing, and packaging options to further explore the potential applications and benefits of TRIS(DIMETHYAMINO)SILANE in your specific industry.
Check Digit Verification of cas no
The CAS Registry Mumber 15112-89-7 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,5,1,1 and 2 respectively; the second part has 2 digits, 8 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 15112-89:
(7*1)+(6*5)+(5*1)+(4*1)+(3*2)+(2*8)+(1*9)=77
77 % 10 = 7
So 15112-89-7 is a valid CAS Registry Number.
InChI:InChI=1/C6H18N3Si/c1-7(2)10(8(3)4)9(5)6/h1-6H3
15112-89-7Relevant articles and documents
Aylett,Peterson
, p. 3429,3430-3432 (1964)
METHOD FOR PRODUCING DIALKYLAMINOSILANE
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Paragraph 0076-0078, (2020/05/06)
A method for safely and efficiently producing high-purity dialkylaminosilane. Dialkylamine is fed simultaneously during feeding chlorosilane in the presence of metal to cause reaction. For example, chlorosilane and dialkylamine are fed, and then only dialkylamine is fed to cause reaction, whereby dialkylaminosilane is produced.
1,1,1-TRIS(ORGANOAMINO)DISILANE COMPOUNDS AND METHOD OF PREPARING SAME
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Paragraph 0096-0097, (2019/02/15)
A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.
