Add time:07/24/2019 Source:sciencedirect.com
Non-heating atomic layer deposition of SiO2 is developed using TRIS(DIMETHYLAMINO)SILANE (cas 15112-89-7) (TDMAS) and plasma-excited water vapor. The plasma-excited water is effective in oxidizing the TDMAS-adsorbed SiO2 surface while leaving OH sites on the growing surface at room temperature for further TDMAS adsorption. The growth rate is measured to be 0.075 nm/cycle at room temperature. SiO2 stacking directly on a Ge (100) wafer at room temperature is demonstrated, where an atomically flat interface is confirmed by transmission electron microscope observation.
We also recommend Trading Suppliers and Manufacturers of TRIS(DIMETHYLAMINO)SILANE (cas 15112-89-7). Pls Click Website Link as below: cas 15112-89-7 suppliers
About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia
Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog
©2008 LookChem.com,License: ICP
NO.:Zhejiang16009103
complaints:service@lookchem.com Desktop View