4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Chemical Properties
Melting point 203-207°C
density 1.190±0.06 g/cm3(Predicted)
form powder
pka -1.07±0.60(Predicted)
Safety Information
Hazard Codes Xi
Risk Statements 36/37/38
Safety Statements 26-36
WGK Germany 3
HS Code 29214200
MSDS Information
4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine Usage And Synthesis
Applications With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.
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