Gallium trioxide 12024-21-4 Supplier
Product Introduction:
99.99% gallium trioxide (Ga2O3)
1. Technical docking: Electric arc heating instantly vaporizes gallium, and the vaporized gallium vapor is deposited with excess oxygen by CVD chemical vapor deposition: 4Ga+3O2=2Ga2O3, without any acid ions; For example: chloride ions, nitrate ions;
2. Inspection: GDMS (99.99% purity: all impurity elements are lower than 100ppm)
XRD: (main peak completely symmetrical); Laser particle size analyzer: (particle size: D50<10 μ m);
Overview
99.99% gallium trioxide (Ga2O3)
1. Technical docking: Electric arc heating instantly vaporizes gallium, and the vaporized gallium vapor is deposited with excess oxygen by CVD chemical vapor deposition: 4Ga+3O2=2Ga2O3, without any acid ions; For example: chloride ions, nitrate ions;
2. Inspection: GDMS (99.99% purity: all impurity elements are lower than 100ppm)
XRD: (main peak completely symmetrical); Laser particle size analyzer: (particle size: D50<10 μ m);
3. Service: Provide MSDS and practical protective measures; Provide application solutions for materials;
Technical Parameter
4. Character: α- Ga2O3 is a hexagonal crystal structure, β- Ga2O3 belongs to monoclinic crystal type;
5. Purity: 99.99% -99.999%;
6. Appearance: White powder;
7. Packaging: 1Kg/bottle, plus aluminum composite film Vacuum packing;
8. Applications: TGG single crystal, optoelectronic devices, ultraviolet filters, etc;
Product Introduction:
99.99% gallium trioxide (Ga2O3)
1. Technical docking: Electric arc heating instantly vaporizes gallium, and the vaporized gallium vapor is deposited with excess oxygen by CVD chemical vapor deposition: 4Ga+3O2=2Ga2O3, without any acid ions; For example: chloride ions, nitrate ions;
2. Inspection: GDMS (99.99% purity: all impurity elements are lower than 100ppm)
XRD: (main peak completely symmetrical); Laser particle size analyzer: (particle size: D50<10 μ m);
Overview
99.99% gallium trioxide (Ga2O3)
1. Technical docking: Electric arc heating instantly vaporizes gallium, and the vaporized gallium vapor is deposited with excess oxygen by CVD chemical vapor deposition: 4Ga+3O2=2Ga2O3, without any acid ions; For example: chloride ions, nitrate ions;
2. Inspection: GDMS (99.99% purity: all impurity elements are lower than 100ppm)
XRD: (main peak completely symmetrical); Laser particle size analyzer: (particle size: D50<10 μ m);
3. Service: Provide MSDS and practical protective measures; Provide application solutions for materials;
Technical Parameter
4. Character: α- Ga2O3 is a hexagonal crystal structure, β- Ga2O3 belongs to monoclinic crystal type;
5. Purity: 99.99% -99.999%;
6. Appearance: White powder;
7. Packaging: 1Kg/bottle, plus aluminum composite film Vacuum packing;
8. Applications: TGG single crystal, optoelectronic devices, ultraviolet filters, etc;
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