Add time:07/24/2019         Source:sciencedirect.com

DIETHYLGERMANE (cas 1631-46-5) [(CH3CH2)2GeH2], (DEG), is a potential molecular precursor for germanium deposition on silicon surfaces. In this study, Fourier transform infrared (FTIR) transmission spectroscopy was employed to examine the adsorption and decomposition of DEG on high surface area porous silicon surfaces. The FTIR spectra revealed that DEG dissociatively adsorbs on porous silicon surfaces at 200 K to form SiH, GeH and SiCH2CH3 surface species. No spectral features were observed for GeCH2CH3 surface species. The C-H stretching modes between 2959 and 2882 cm−1, the Si-H stretch at 2082 cm−1 and the Ge-H stretch at 1999 cm−1 were then employed to monitor the decomposition of the surface species during thermal annealing. Between 300 and 640 K the GeH species transferred hydrogen to the silicon surface and formed SiH species. The SiCH2CH3 species decomposed to yield gas phase CH2CH2 and additional SiH surface species between 400 and 700 K. These reaction products were consistent with a β-hydride elimination mechanism, i.e. SiCH2CH3 → SiH + CH2CH2. From 660–800 K the SiH surface species decreased concurrently with H2 desorption. The decomposition pathways of the surface species following DEG adsorption indicate that DEG may be useful for germanium deposition on silicon surfaces.

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