Add time:07/25/2019         Source:sciencedirect.com

Impurities in electrodeposited thin films of CdTe were identified from secondary ion mass spectroscopy (SIMS) data obtained with a Perkin-Elmer PHI Model 2500, a Cameca IMS 3F and a Cameca IMS 4F operated with the primary ions Ar+, O- and Cs+ respectively. The sources of the impurities were sought using the techniques of SIMS, inductively coupled plasma-atomic emission spectroscopy, and atomic absorption spectrophotometry to analyse the components of the plating bath solution (cadmium sulphate, Milli-Q water, sulphuric acid, tellurium anode, glass/ITO/CdS-cathode, reference electrodes) and the solution containers. Six different supplies of 3CdSO4-8H2O were investigated. Each had at least twelve impurities totalling over 61 μg/g. Sulphuric acid (pH=2) leached more impurities from vessels made from Duran-Schott glass or Corning Pyrex glass than from vessels made from Teflon or Vitreosil silica. Milli-Q water and the platinum or mercury cathodes used in the electrodeposition step were not seen to be a source of impurities, but the ITO/CdS slide used for the CdTe deposition was. Electropurification of the solution before injection of Te ions from the Te anode removed Cr, Fe, Cu, Ag, Tl, Pb and Bi. However, injection of Te ions before electrodeposition introduced impurities, notably B, Mg, Sc, Mn, Fe, Co, Cu and In. Each impurity in the CdTe films was present in the deposition chemicals or leached from the materials in contact with these chemicals. It is concluded that CdTe film purity may be enhanced by judicious choice of deposition materials and procedure; as well, some of the analytical data presented in this paper should be useful in other areas of research where ultra-purity is required.

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