Encyclopedia

  • Copper telluride thin films grown by pulsed laser deposition
  • Add time:07/29/2019         Source:sciencedirect.com

    Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu2Te as target. Films were grown at substrate temperatures ranging from room temperature to 300 °C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the CuxTe films depends on the growth temperature. For a substrate temperature of 300 °C a Cu2Te film with hexagonal phase was obtained.

    We also recommend Trading Suppliers and Manufacturers of COPPER(I) TELLURIDE (cas 12019-52-2). Pls Click Website Link as below: cas 12019-52-2 suppliers


    Prev:Synthesis of bismuth telluride nanotubes and their simulated thermal properties
    Next: Electrochemical synthesis of copper(I) dicyanamide thin films)

About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia

Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog

©2008 LookChem.com,License: ICP

NO.:Zhejiang16009103

complaints:service@lookchem.com Desktop View