Add time:07/28/2019         Source:sciencedirect.com

The phase composition, conductance and surface morphology of thin films of silicides of rare earth metals (of the yttrium subgroup) were studied. The silicides were formed by annealing thin film structures of the rare earth metal (Ln) and silicon at 473–673 K for 1–120 min in vacuum. X-ray analysis revealed the formation of crystalline silicide phases of composition LnSi2-x and of the AlB2 structural type for all the metals concerned except scandium, gadolinium and lutetium.It was established that the formation of the crystalline silicide phase is determined by the relation between the crystallographic parameters of a rare earth metal hexagonal lattice and silicon; the critical value of the lattice mismatch a is ± 1.3%. The kinetics of formation of a silicide phase were determined by measuring the conductance of thin film structures. A model for the formation of rare earth metal silicides in thin film structures is proposed, which serves as a basis for establishing conditions for the formation of quasi-amorphous, polycrystalline or large-block rare earth metal silicide layers, with a perfect silicide-silicon interface, taking into account the crystallographic orientation and parameter relationship of the substrate and the silicide.

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