Add time:07/26/2019         Source:sciencedirect.com

Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with manganese and grown by molecular beam epitaxy was investigated. Secondary ion mass spectroscopy (SIMS) was used to show that the incorporation of managenese is near unity over a wide range of manganese concentrations. Manganese is observed to be an acceptor with a dopant efficiency which follows a power law in which the hole density is proportional to the manganese concentration raised to the power α. The power α depends on the growth temperature; at 300°C, α = 0.86 and at 360°C, α = 0.78. Lightly manganese doped samples have transport dominated by electrons at low temperatures due to hole freeze out, followed by holes at intermediate temperatures and finally by intrinsic electrons at high temperatures. Additional SIMS studies showed that manganese diffuses relatively slowly in indium antimonide.

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