Add time:07/28/2019         Source:sciencedirect.com

Polycrystalline ingots of gallium MANGANESE ANTIMONIDE (cas 12032-82-5) [Ga1 − xMnxSb (0 < x < 0.1)], a new and promising III–V semimagnetic semiconductor, were grown by the vertical Bridgman method. The X-ray diffraction using CuKα radiation confirmed the formation of the crystals and the lattice parameters were used to determine the composition of the crystals. From electron probe microanalysis the homogeneity of the composition along the length and the diameter of the ingot was examined. The wafer morphology was investigated by optical microscopy. The etch pit density (EPD) was determined by the image analysis method. The variation of EPD along the length and diameter of the ingot as well as with the Mn concentration was studied.

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