Add time:08/01/2019         Source:sciencedirect.com

Silicon samples were implanted with up to 6E+16 cm−2 of 190 keV manganese and next treated with plasma pulses of duration about 1 μs and energy density up to 4 J cm−2. Channelled RBS spectra measured after pulse treatment reveal nearly perfect recovery of crystalline order with manganese segregated towards the surface and occupying non-substitutional positions. SQUID magnetization measurements show the formation of paramagnetic phase of concentration increasing with the applied manganese fluence.

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