Add time:08/04/2019         Source:sciencedirect.com

We report the ion beam based single step synthesis process of surface-patterned amorphous Silicon (a-Si) with a buried plasmon active nickel silicide layer for the realization of cost-effective, higher efficiency Silicon (Si) photovoltaic devices. Simultaneous amorphization, surface pattern formation and buried layer development are achieved by normal incidence 10 keV Ni1+ ion bombardment on Si(100) surface at a fluence of 1 × 1017. Atomic Force Microscopy study shows rim-surrounded crater like periodic nanostructure on the surface whereas cross-sectional Transmission Electron Microscopy detects the amorphization and implant buried layer just below the surface. The distribution of implanted Ni ions and Si vacancies, obtained by the Monte Carlo simulation (SRIM) is consistent with the experimental results. Spatially resolved Electron Energy Loss Spectroscopy measurement detects that the buried layer is nickel silicide. The potential application of such nano-patterned and plasmon active system for future low-cost a-Si based higher efficient Photovoltaic devices is discussed.

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