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  • Influence of the ytterbium doping technique on the luminescent properties of ZnSe single crystals
  • Add time:07/29/2019         Source:sciencedirect.com

    Luminescent properties of the ytterbium doped zinc selenide crystals with 0.00–8.00 at % concentrations of the Yb impurity within the temperature interval from 6 K to 300 K were studied. Ytterbium doping was performed within three technological processes: during the growth by chemical vapor transport method and by thermal diffusion from the Bi+Yb or Zn+Yb melt. The influence of ytterbium impurity concentration on spectral position and intensity of the various photoluminescent bands in ZnSe emission spectra in visible and infrared range is analyzed. A tendency of ytterbium ions to form associates with background defects was demonstrated. A strong dependence between ytterbium influence on the zinc selenide emission spectra and concentration of selenium vacancies was shown.

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    Prev:Quantum dot cadmium selenide as a saturable absorber for Q-switched and mode-locked double-clad ytterbium-doped fiber lasers
    Next: The thermodynamics of sublimation and formation of ytterbium (II) selenide)

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