Add time:07/28/2019         Source:sciencedirect.com

We fabricated VANADIUM SILICIDE (cas 12039-76-8) (V3Si) nano-particles embedded in silicon dioxide dielectric layer and characterized their charging effect to apply a non-volatile memory device. To create the V3Si nano-particles, the first post-annealing process in N2 gas ambient by rapid thermal annealing method was done at 800 °C for 5 s. V3Si nano-particles with an average size of approximately 4–6 nm were distributed between the tunnel and control oxide layers. The channel length and width of the transistor are 5 μm. This device maintained the memory window at about 1 V after 104 s, when applied program/erase voltages are ±9 V for 1 s. This result indicates that V3Si nano-particles have a high potential for non-volatile memory devices.

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