Add time:08/04/2019         Source:sciencedirect.com

To improve the performance of VLSI circuits by reducing the parasitic series resistance of long interconnect lines, a composite structure of TANTALUM SILICIDE (cas 12039-79-1) and poly-silicon layers with a resistivity of ⪕ 5 Ω□ has been developed. The physical properties of the silicide film were characterized using AES, SIMS and SEM evaluations to examine silicide compatibility with the CMOS integrated circuits fabrication process. Tantalum silicide film composition and integrity, high temperature anneal performance, Auger depth profiles, ion-implant profiles for boron and phosphorous implants in TaSi2, and silicide step coverage over silicon/SiO2 steps are reported in this paper.

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