Add time:07/29/2019         Source:sciencedirect.com

The effect of filament temperature and deposition time on the formation of TUNGSTEN SILICIDE (cas 12039-88-2) upon exposure to the SiH4 gas in a hot wire chemical vapor deposition process was studied using the techniques of cross-sectional scanning electron microscopy and Auger electron spectroscopy. At a relatively low temperature of 1500 °C, the decomposition of WSi2 phase and the diffusion of Si towards the silicide/W interface produce a thick W5Si3 layer. The diffusional nature leads to a parabolic rate law for silicide growth. An exponential decrease of silicide thickness with temperature between 1600 and 2000 °C illustrates the dominance of Si evaporation at higher temperatures (T ≥ 1600 °C) over the silicide formation.

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