Add time:07/28/2019         Source:sciencedirect.com

A paper devotes to theoretical and experimental studying the magnetoelectric interaction in layered structures of amorphous ferromagnetic alloy and single- crystal gallium arsenide.The authors investigated the magnetoelectric effect in the (100) plane of gallium arsenide in the electromechanical resonance range of 200–240 kHz and obtained maximal ME voltage coefficient of 120 V/A at bias field equaled 3.6 kA/m for the direction parallel to the [011] axis. Also the magnetoelectric effect in the (110) and (111) planes is discussed. The results can be used for design of new electronic devices based on the magnetostrictive-semiconductor materials.

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